Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser

Applied Physics Letters

Volumn 84, Issue 18, 2004, Pages 3567-3569

  Takano, Takayoshi ^a   Narita, Yoshinobu ^a   Horiuchi, Akihiko ^a   Kawanishi, Hideo ^a  

^a KOGAKUIN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; LASERS; LATTICE CONSTANTS; LIGHT EMITTING DIODES; OPTICAL PUMPING; PHOTOLUMINESCENCE; REFRACTIVE INDEX; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; STRAIN CONTROL;

CURRENT INJECTION; DISLOCATION DENSITY; EPITAXIAL LAYERS; RESIDUAL STRAIN; ULTRAVIOLET LASING;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 2542419125     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1737061     Document Type: Article

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