Electrical characteristics of AlGaN/GaN HEMTs on 4-in diameter sapphire substrate

IEEE Electron Device Letters

Volumn 24, Issue 8, 2003, Pages 497-499

  Arulkumaran, S ^a   Miyoshi, M ^a,b   Egawa, T ^a   Ishikawa, H ^a   Jimbo, T ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b NGK INSULATORS LTD   (Japan)

Author keywords

4 in sapphire; Aluminum gallium nitride; Gallium nitride; HEMTs; MOCVD; Uniformity

Indexed keywords

CURRENT DENSITY; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE MEASUREMENT; GALLIUM NITRIDE; HALL EFFECT; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

ALUMINUM GALLIUM NITRIDE; ELECTRICAL CHARACTERISTICS; SAPPHIRE SUBSTRATE; UNIFORMITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0041886629     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.815162     Document Type: Article

References (7)

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