A study of parasitic reactions between NH3 and TMGa or TMAI

Journal of Electronic Materials

Volumn 25, Issue 6, 1996, Pages 1004-1008

  Chen, C H ^a   Liu, H ^a   Steigerwald, D ^a   Imler, W ^a   Kuo, C P ^a   Craford, M G ^a   Ludowise, M ^b   Lester, S ^b   Amano, J ^b  

^a Hewlett Packard Optoelectronics Div   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

Aluminum nitride; Gallium nitride; Parasitic reaction; Pressure dependence

Indexed keywords

ALUMINUM COMPOUNDS; AMMONIA; CHEMICAL REACTIONS; DEPOSITION; GALLIUM COMPOUNDS; GROWTH (MATERIALS); METALORGANIC VAPOR PHASE EPITAXY; NITRIDES; PRESSURE EFFECTS; THERMAL EFFECTS;

ALUMINUM NITRIDES; GALLIUM NITRIDES; PARASITIC REACTIONS;

ORGANOMETALLICS;

EID: 0030156733     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666736     Document Type: Article

References (23)

1. J.P. Noad and A.J. SpringThorpe, J. Electron. Mater. 9, 601 (1980).
2. S. J. Bass, C. Pickering and M.L. Young, J. Cryst. Growth 64, 68 (1983).
3. C.P. Kuo, J.S. Yuan, R.M. Cohen, J. Dunn and G.B. Stringfellow, Appl. Phys. Lett. 44, 550 (1984).
4. M. Ludowise, J. Appl. Phys. 58, R31 (1985), and references therein.
5. G.B. Stringfellow, Organometallic Vapor Phase Epitaxy: Theory and Practice, (San Diego: Associated Press, 1989), Section 2.3.
6. G.E. Coates, M.L.H. Green and K. Wade, Organometallic Compounds: The Main Group Elements, Vol. I, 3rd ed. (London: Meuthen & Co., LTD, 1967).
7. C.B. Cooper III, M.J. Ludowise, V. Aebi and R.L. Moon, J. Electron. Mater. 9, 299 (1980).
8. G.B. Stringfellow, Organometallic Vapor Phase Epitaxy: Theory and Practice, (San Diego: Associated Press, 1989), p. 10.
9. C.C. Hsu, R.M. Cohen and G.B. Stringfellow, J. Cryst. Growth 63, 8 (1983).
10. J.P. Duchemin, J.P. Hirtz, M. Razaghi, M. Bonnet and S.D. Hersee, J. Cryst. Growth 55, 64 (1981).
11. S. Nakamura, T. Mukai and M. Sennoh, J. Appl. Phys. 76, 8189 (1994).
12. G.B. Stringfellow, Organometallic Vapor Phase Epitaxy: Theory and Practice, (San Diego: Associated Press, 1989), chap. 6.
13. G.B. Stringfellow, Organometallic Vapor Phase Epitaxy: Theory and Practice, (San Diego: Associated Press, 1989), p. 265.
14. T. Kuech, Materials Science Reports 2, 1 (1987).
15. G.B. Stringfellow, Organometallic Vapor Phase Epitaxy: Theory and Practice, (San Diego: Associated Press, 1989), Section 6.3.
16. H. Heinecke, E. Veuhoff, N. Putz, M. Heyyen and P. Balk, J. Electron. Mater. 13, 815 (1984).
17. R. J. Field and S.K. Ghandhi, J. Cryst. Growth 69, 581 (1984).
18. C. Theodoropoulos, N.K. Ingle, T.J. Mountziaris, Z.-Y. Chen, P. Liu, G. Kioseoglou and A. Petrou, J. Electrochem. Soc. 142, 2086 (1995).
19. T.F. Kuech, E. Veuhoff, T.S. Kuan, V. Deline and R. Potemski, J. Cryst. Growth 77, 257 (1986).
20. I. Akasaki, H. Amano,Y. Koide, K. Hiramatsu and N. Sawaki, J. Cryst. Growth 98, 209 (1989).
21. B.S. Sywe, J.R. Schlup and J.H. Edgar, Chem. Mater. 3, 737 (1991).
22. B.S. Sywe, J.R. Schulp and J.H. Edgar, Chem. Mater. 3, 1093 (1991).
23. A. Thon and T.F. Kuech, Proc. 1995 Fall MRS meeting on GaN and Related Mater. (Symp. AAA).