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Volumn , Issue , 2009, Pages

Low leakage high breakdown E-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE VALUES; BREAKDOWN VOLTAGE; DEPLETION MODES; DOUBLE HETEROSTRUCTURES; DRAIN BIAS; ELECTRON-DONATING; HIGH BREAKDOWN; HIGH VOLTAGE; IN-SITU; LOW LEAKAGE; LOW-LEAKAGE CURRENT; MODE OPERATION; PASSIVATION LAYER; SELECTIVE REMOVAL; STANDARD DEVIATION; THRESHOLD VOLTAGE DISTRIBUTION;

EID: 77952407236     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424399     Document Type: Conference Paper
Times cited : (27)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.