Traps in AlGaNGaNSiC heterostructures studied by deep level transient spectroscopy

Applied Physics Letters

Volumn 87, Issue 18, 2005, Pages 1-3

  Fang, Z Q ^a,b   Look, D C ^a,b   Kim, D H ^c   Adesida, I ^c  

^a WRIGHT STATE UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGANGANSIC HETEROSTRUCTURES; CAPACITANCE-VOLTAGE MEASUREMENTS; DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS); THREADING DISLOCATIONS;

ACTIVATION ENERGY; ELECTRIC POTENTIAL; GALLIUM NITRIDE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON;

HETEROJUNCTIONS;

EID: 27344454630     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2126145     Document Type: Article

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