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Volumn 29, Issue 12, 1996, Pages 2961-2970

Misfit dislocation formation in lattice-mismatched III-V heterostructures grown by metal-organic vapour phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); LATTICE CONSTANTS; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SHEAR STRESS; STRESS ANALYSIS; STRESS RELAXATION; SUBSTRATES; TENSILE PROPERTIES;

EID: 0030396452     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/29/12/004     Document Type: Article
Times cited : (17)

References (40)
  • 6
    • 21544464728 scopus 로고
    • Erratum 1986 Appl. Phys. Lett. 49 229
    • People R and Bean J C 1985 Appl. Phys. Lett. 47 322; Erratum 1986 Appl. Phys. Lett. 49 229
    • (1985) Appl. Phys. Lett. , vol.47 , pp. 322
    • People, R.1    Bean, J.C.2
  • 27
    • 4243103220 scopus 로고
    • Colloq. C6 foreword
    • Convention, made at the International Symposium on Dislocations in Tetrahedrally Coordinated Semiconductors, Hünfeld 1979 J. Physique Coll. 40 Colloq. C6 foreword
    • (1979) J. Physique Coll. , vol.40
    • Hünfeld1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.