Effect of nitridation on polarity, microstructure, and morphology of AlN films

Applied Physics Letters

Volumn 84, Issue 6, 2004, Pages 912-914

  Wu, Y ^a   Hanlon, A ^a   Kaeding, J F ^a   Sharma, R ^a   Fini, P T ^b   Nakamura, S ^b   Speck, J S ^b  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITRIDING; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; VOLUME FRACTION;

CONVERGENT BEAM ELECTRON DIFFRACTION; CRYSTAL POLARITY; ELECTRON MICROSCOPY SIMULATION; HOMOEPITAXIAL GROWTH; LATTICE MISMATCH; SCATTERING CONTRAST IMAGING ANALYSIS; THREADING DISLOCATION DENSITY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 1542375010     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1646222     Document Type: Article

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