AlGaN/GaN HEMTs - An overview of device operation and applications

Proceedings of the IEEE

Volumn 90, Issue 6, 2002, Pages 1022-1031

  Mishra, Umesh K ^a,b,d,e,f   Parikh, Primit ^c,g   Wu, Yi Feng ^c  

^a IEEE   (United States)

^b University of California   (United States)

^c Arkansas Power Electronics International Inc   (United States)

^d Hughes Aircraft Co   (United States)

^e UNIVERSITY OF MICHIGAN   (United States)

^f GENERAL ELECTRIC COMPANY   (United States)

^g GaN Electronics Program

Author keywords

Gallium nitride; High electron mobility transistor (HEMts); MMICs; Polarization

Indexed keywords

ALUMINUM ALLOYS; BAND STRUCTURE; GALLIUM NITRIDE; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POLARIZATION; RADAR; SEMICONDUCTOR MATERIALS;

BANDGAP SEMICONDUCTORS; MICROWAVE TRANSMITTERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0001473741     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2002.1021567     Document Type: Article

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