Doping of AlGaN alloys

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Van De Walle, Chris G ^a   Stampfl, C ^a   Neugebauer, J ^b   McCluskey, M D ^a,c   Johnson, N M ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

^b FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^c WASHINGTON STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; IONIZATION; LASER BEAM EFFECTS; OPTOELECTRONIC DEVICES; THIN FILMS;

DOPING EFFICIENCY; ELECTRON CONCENTRATION; RESISTIVE FILMS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 3442887478     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300003574     Document Type: Conference Paper

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