Undoped AlGaN/GaN HEMTs for microwave power amplification

IEEE Transactions on Electron Devices

Volumn 48, Issue 3, 2001, Pages 479-485

  Eastman, L F ^a   Tilak, V ^a   Smart, J ^a   Green, B M ^a   Chumbes, E M ^a   Dimitrov, R ^a   Kim, H ^a   Ambacher, O S ^a   Weimann, N ^a   Prunty, T ^a   Murphy, M ^a   Schaff, W J ^a   Shealy, J R ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; COMPUTER SIMULATION; CRYSTAL STRUCTURE; ELECTRON GAS; GALLIUM NITRIDE; MICROWAVE AMPLIFIERS; PIEZOELECTRICITY; POLARIZATION; POWER AMPLIFIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

ALUMINUM GALLIUM NITRIDE; ELECTRON SHEET DENSITY; ORGANOMETALIC VAPOR PHASE EPITAXY; PIEZOELECTRIC POLARIZATION; SURFACE PASSIVATION; THERMAL SIMULATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035279816     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.906439     Document Type: Article

References (23)

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