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Applied Physics Letters

Volumn 83, Issue 4, 2003, Pages 674-676

Si doping effect on strain reduction in compressively strained Al 0.49Ga0.51N thin films

(8) Cantu, P a Wu, F a Waltereit, P a Keller, S a Romanov, A E a,b Mishra, U K a DenBaars, S P a Speck, J S a

a University of California (United States)

b IOFFE INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SILICON; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

THREADING DISLOCATIONS (TD);

THIN FILMS;

EID: 0041511977 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1595133 Document Type: Article

Times cited : (140)

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