Epitaxy of GaN on silicon - Impact of symmetry and surface reconstruction

New Journal of Physics

Volumn 9, Issue , 2007, Pages

  Dadgar, A ^a,b   Schulze, F ^a   Wienecke, M ^a   Gadanecz, A ^a   Blasing J ^a   Veit, P ^a   Hempel, T ^a   Diez, A ^a   Christen, J ^a   Krost, A ^a,b  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b AZZURRO Semiconductors AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; SAPPHIRE; SILICON CARBIDE; SURFACE RECONSTRUCTION;

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS); GAN LAYERS; GAN-ON-SILICON; SINGLE CRYSTALLINE DEVICES; THREEFOLD SYMMETRY;

GALLIUM NITRIDE;

EID: 35748941983     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/9/10/389     Document Type: Article

References (27)

1. Dadgar A, Bläsing J, Diez A, Alam A, Heuken M and Krost A 2000 Japan J. Appl. Phys. 39 L1183
2. Brown J D, Borges R, Piner E, Vescan A, Singhal S and Therrien R 2002 Solid State Electron. 46 1535
3. Dadgar A, Hums C, Diez A, Schulze F, Bläsing J and Krost A 2006 Proc. SPIE 6355 63550R
4. Kung P, Saxler A, Zhang X, Walker D, Wang T C, Fergusson 1 and Razeghi M 1995 Appl. Phys. Lett. 66 2958
5. Boo J-H, Lee S-B, Kim Y-S, Park J T, Yu K-S and Kim Y 1999 Phys. Status Solidi a 176 711
6. Zhang X, Chua S-J, Li P, Chong K-B and Feng Z-C 1999 Appl. Phys. Lett. 74 1984
7. Zhang X, Chua S J, Feng Z C, Chen J and Lin J 1999 Phys. Status Solidi a 176 605
8. Wan J, Venugopal R, Melloch M R, Liaw H M and Rummel W J 2001 Appl. Phys. Lett. 79 1459
9. Zhang X, Hou Y-T, Feng Z-C and Chen J L 2001 J. Appl. Phys. 89 6165
10. Grundmann M, Krost A and Bimberg D 1991 Appl. Phys. Lett. 58 284
11. Naithoh M, Shimaya H, Watanabe A and Nishsgaki S 1998 Japan J. Appl. Phys. 37 2033
12. Dadgar A and Krost A 2002 MOVPE growth of GaN on Si Vacuum Science and Technology: Nitrides as seen by the Technology ed T Paskova and B Monemar (Kerala, India: Research Signpost)
13. Liu R, Ponce F A, Dadgar A and Krost A 2003 Appl. Phys. Lett. 83 860
14. Wu X H, Fini P, Tarsa E J, Heying B, Keller S, Mishra U K, DenBaars S P and Speck J S 1998 J. Cryst. Growth 189-190 231
15. Dadgar A, Poschenrieder M, Reiher A, Biasing J, Christen J, Krtschil A, Finger T, Hempel T, Diez A and Krost A 2003 Appl. Phys. Lett. 82 28
16. Strittmatter A, Rodt S, Reißmann L, Bimberg D, Schröder H, Obermeier E, Riemann T, Christen J and Krost A 2001 Appl. Phys. Lett. 78 727
17. Davis R F, Gehrke T, Linthicum K J, Zheleva T S, Rajagopal P, Zorman C A and Mehregany M 2000 MRS Internet J. Nitride Semicond. Res. 5S1 W2.1
18. Gardeniers J G E and Giling L J 1991 J. Cryst. Growth 115 542
19. Swartzentruber B S, Mo Y W, Webb M B and Legally M G 1990 J. Vac. Sci. Technol. A 8 210
20. Zhao R G, Chuan H, Jia J F and Yang W S 1994 Surf. Sci. 318 L1206
21. Schwartzentruber B S, Kitamura N, Lagally M and Webb M B 1993 Phys. Rev. B 47 13432
22. Aumann C et al 1992 Surf. Sci. 275 1
23. Dadgar A, Schulze F, Zettler T, Haberland K, Clos R, Straßburger G, Biasing J, Diez A and Krost A 2004 J. Cryst. Growth 272 72
24. Clos R, Dadgar A and Krost A 2004 Phys. Status Solidi a 201 R75
25. Schulze F, Dadgar A, Biasing J and Krost A 2004 J. Cryst. Growth 272 496
26. Yamamoto Y, Ino S and Ichikawa T 1986 Japan J. Appl. Phys. 25 L331
27. Dadgar A et al 2004 Advances in Solid State Physics vol 44 ed B Kramer (Berlin: Springer)