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Journal of Applied Physics

Volumn 105, Issue 3, 2009, Pages

Activation of ion implanted Si in GaN using a dual AlN annealing cap

(4) Hager, C E a Jones, K A a Derenge, M A a Zheleva, T S a

a U S ARMY RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ACTIVATION; CHEMICAL VAPOR DEPOSITION; ELECTRODEPOSITION; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; SEMICONDUCTING GALLIUM; SILICON; SILICON COMPOUNDS; SURFACE DIFFUSION; SURFACE ROUGHNESS;

ADHESION LAYERS; ALN; ALN FILMS; ANNEALING TEMPERATURES; CRACK LIKES; DOPED FILMS; DUAL-ANNEALING; ELECTRICAL ACTIVATIONS; ETCH-PITS; HIGHER TEMPERATURES; IMPLANTED LAYERS; IN-SITU; ION IMPLANTED; LOW TEMPERATURES; MECHANICAL STRENGTHS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; MOCVD; SOLID-STATE DIFFUSIONS; YIELD STRENGTHS;

ANNEALING;

EID: 60449092401 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3068317 Document Type: Article

Times cited : (42)

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