High-voltage (600-V) low-leakage low-current-collapse AlGaN/GaN HEMTs with AlN/SiNx passivation

IEEE Electron Device Letters

Volumn 34, Issue 3, 2013, Pages 366-368

  Tang, Zhikai ^a   Huang, Sen ^a,b   Jiang, Qimeng ^a   Liu, Shenghou ^a   Liu, Cheng ^a   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

AlGaN GaN; AlN SiNx passivation; current collapse; high voltage; high electron mobility transistors (HEMTs); off state leakage

Indexed keywords

ALGAN/GAN; ALN; CURRENT COLLAPSE; HIGH ELECTRON MOBILITY TRANSISTOR (HEMTS); HIGH VOLTAGE; OFF-STATE LEAKAGE;

DEPOSITS; DRAIN CURRENT; ELECTRIC CURRENT MEASUREMENT; GALLIUM NITRIDE; PASSIVATION; SILICON NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84874647014     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2236638     Document Type: Article

References (12)

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