High mobility two-dimensional electron gas in AlGaNGaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy

Applied Physics Letters

Volumn 86, Issue 10, 2005, Pages 1-3

  Skierbiszewski, C ^a   Dybko, K ^b   Knap, W ^c   Siekacz, M ^a   Krupczynski W ^a   Nowak, G ^a   Bockowski M ^a   Lusakowski J ^c,d   Wasilewski, Z R ^e   Maude, D ^f   Suski, T ^a   Porowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

^c UNIVERSITÉ MONTPELLIER 2   (France)

^d UNIVERSITY OF WARSAW   (Poland)

^e NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^f CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; ELECTRON GAS; ELECTRON SCATTERING; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; THERMAL EFFECTS;

BUFFER LAYERS; MAGNETOTRANSPORT; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (PAMBE); ROOM TEMPERATURE;

HETEROJUNCTIONS;

EID: 17944382212     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1873056     Document Type: Article

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