Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics

Solid-State Electronics

Volumn 42, Issue 12, 1998, Pages 2177-2181

  Ren, F ^a   Abernathy, C R ^a   Mackenzie, J D ^a   Gila, B P ^a   Pearton, S J ^a   Hong, M ^b   Marcus, M A ^b   Schurman, M J ^c   Baca, A G ^d   Shul, R J ^d  

^a University of Florida   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c EMCORE Corporation   (United States)

^d SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; VOLTAGE MEASUREMENT;

GALLIUM NITRIDE;

SEMICONDUCTOR DIODES;

EID: 0032295452     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00213-5     Document Type: Article

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