Growth and characterization of freestanding GaN substrates

Journal of Crystal Growth

Volumn 237-239, Issue 1 4 II, 2002, Pages 912-921

  Motoki, Kensaku ^a   Okahisa, Takuji ^a   Nakahata, Seiji ^a   Matsumoto, Naoki ^a   Kimura, Hiroya ^a   Kasai, Hitoshi ^a   Takemoto, Kikurou ^a   Uematsu, Koji ^a   Ueno, Masaki ^a   Kumagai, Yoshinao ^b   Koukitu, Akinori ^b   Seki, Hisashi ^b  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

A1. Line defects; A1. Substrates; A3. Hydride vapor phase epitaxy; B1. Nitride; B2. Semiconducting materials

Indexed keywords

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; MOLECULAR ORIENTATION; SILICA; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

HYDRIDE VAPOR PHASE EPITAXY (HVPE);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 10044265214     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02078-4     Document Type: Article

References (20)