C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 831-834

  Kato, Sadahiro ^a   Satoh, Yoshihiro ^a   Sasaki, Hitoshi ^a   Masayuki, Iwami ^a   Yoshida, Seikoh ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. AlGaN; B1. GaN; B1. Nitride; B3. HFET

Indexed keywords

CARBON; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR DOPING; SILICON WAFERS; SURFACE STRUCTURE;

ALGAN; BUFFER LAYERS; GAN; GROWTH PRESSURE;

FIELD EFFECT TRANSISTORS;

EID: 33846437087     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.192     Document Type: Article

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