SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 96, Issue 10, 2010, Pages

Low defect-mediated reverse-bias leakage in (0001) GaN via higherature molecular beam epitaxy

(5) Law, J J M a Yu, E T a,b,c Koblmuller G b Wu, F b Speck, J S b

a UNIVERSITY OF CALIFORNIA (United States)

b University of California (United States)

c The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE ATOMIC FORCE MICROSCOPY; CURRENT LEAKAGE; FLUX RATIO; PRIMARY SOURCES; REVERSE-BIAS; SCHOTTKY CONTACTS; THREADING DISLOCATION;

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SCREW DISLOCATIONS; SEMICONDUCTOR QUANTUM WIRES; SURFACE DEFECTS; X RAY DIFFRACTION;

MOLECULAR BEAMS;

EID: 77949718374 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3360227 Document Type: Article

Times cited : (37)

References (14)

1
- 0035911397
- Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes
- DOI 10.1063/1.1356450
- J. W. P. Hsu, M. J. Manfra, D. V. Lang, S. Richter, S. N. G. Chu, A. M. Sergent, R. N. Kleiman, L. N. Pfeiffer, and R. J. Molnar, Appl. Phys. Lett. 0003-6951 78, 1685 (2001). 10.1063/1.1356450 (Pubitemid 33598270)
- (2001) Applied Physics Letters , vol.78 , Issue.12 , pp. 1685-1687
- Hsu, J.W.P.¹ Manfra, M.J.² Lang, D.V.³ Richter, S.⁴ Chu, S.N.G.⁵ Sergent, A.M.⁶ Kleiman, R.N.⁷ Pfeiffer, L.N.⁸ Molnar, R.J.⁹

2
- 0035896779
- Screw dislocations in GaN: The Ga-filled core model
- DOI 10.1063/1.1361274
- J. E. Northrup, Appl. Phys. Lett. 0003-6951 78, 2288 (2001). 10.1063/1.1361274 (Pubitemid 33605999)
- (2001) Applied Physics Letters , vol.78 , Issue.16 , pp. 2288-2290
- Northrup, J.E.¹

3
- 0038974576
- Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy
- DOI 10.1063/1.1379789
- J. W. P. Hsu, M. J. Manfra, S. N. G. Chu, C. H. Chen, L. N. Pfeiffer, and R. J. Molnar, Appl. Phys. Lett. 0003-6951 78, 3980 (2001). 10.1063/1.1379789 (Pubitemid 33599481)
- (2001) Applied Physics Letters , vol.78 , Issue.25 , pp. 3980-3982
- Hsu, J.W.P.¹ Manfra, M.J.² Chu, S.N.G.³ Chen, C.H.⁴ Pfeiffer, L.N.⁵ Molnar, R.J.⁶

4
- 35548987974
- In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN
- DOI 10.1063/1.2789691
- G. Koblmüller, S. Fernández-Garrido, E. Calleja, and J. S. Speck, Appl. Phys. Lett. 0003-6951 91, 161904 (2007). 10.1063/1.2789691 (Pubitemid 350004014)
- (2007) Applied Physics Letters , vol.91 , Issue.16 , pp. 161904
- Koblmuller, G.¹ Fernandez-Garrido, S.² Calleja, E.³ Speck, J.S.⁴

5
- 36549047909
- High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy
- DOI 10.1063/1.2817597
- G. Koblmüller, F. Wu, T. Mates, J. S. Speck, S. Fernández- Garrido, and E. Calleja, Appl. Phys. Lett. 0003-6951 91, 221905 (2007). 10.1063/1.2817597 (Pubitemid 350191616)
- (2007) Applied Physics Letters , vol.91 , Issue.22 , pp. 221905
- Koblmuller, G.¹ Wu, F.² Mates, T.³ Speck, J.S.⁴ Fernandez-Garrido, S.⁵ Calleja, E.⁶

6
- 79956057129
- 0003-6951,. 10.1063/1.1490147
- J. W. P. Hsu, M. J. Manfra, R. J. Molnar, B. Heying, and J. S. Speck, Appl. Phys. Lett. 0003-6951 81, 79 (2002). 10.1063/1.1490147
- (2002) Appl. Phys. Lett. , vol.81 , pp. 79
- Hsu, J.W.P.¹ Manfra, M.J.² Molnar, R.J.³ Heying, B.⁴ Speck, J.S.⁵

7
- 0037097915
- Reduction of reverse-bias leakage current in schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope
- DOI 10.1063/1.1478793
- E. J. Miller, D. M. Schaadt, E. T. Yu, C. Poblenz, C. Elsass, and J. S. Speck, J. Appl. Phys. 0021-8979 91, 9821 (2002). 10.1063/1.1478793 (Pubitemid 34720114)
- (2002) Journal of Applied Physics , vol.91 , Issue.12 , pp. 9821
- Miller, E.J.¹ Schaadt, D.M.² Yu, E.T.³ Poblenz, C.⁴ Elsass, C.⁵ Speck, J.S.⁶

8
- 0001206935
- 0021-8979,. 10.1063/1.370150
- B. Heying, E. J. Tarsa, C. R. Elsass, P. Fini, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. 0021-8979 85, 6470 (1999). 10.1063/1.370150
- (1999) J. Appl. Phys. , vol.85 , pp. 6470
- Heying, B.¹ Tarsa, E.J.² Elsass, C.R.³ Fini, P.⁴ Denbaars, S.P.⁵ Speck, J.S.⁶

9
- 2942737374
- 0022-0248,. 10.1016/j.jcrysgro.2004.04.102
- J. C. Zhang, D. G. Zhao, J. F. Wang, Y. T. Wang, J. Chen, J. P. Liu, and H. Yang, J. Cryst. Growth 0022-0248 268, 24 (2004). 10.1016/j.jcrysgro.2004.04. 102
- (2004) J. Cryst. Growth , vol.268 , pp. 24
- Zhang, J.C.¹ Zhao, D.G.² Wang, J.F.³ Wang, Y.T.⁴ Chen, J.⁵ Liu, J.P.⁶ Yang, H.⁷

10
- 65749112388
- 0022-0248,. 10.1016/j.jcrysgro.2009.01.050
- J. Q. Liu, J. F. Wang, Y. F. Liu, K. Huang, X. J. Hu, Y. M. Zhang, Y. Xu, K. Xu, and H. Yang, J. Cryst. Growth 0022-0248 311, 3080 (2009). 10.1016/j.jcrysgro.2009.01.050
- (2009) J. Cryst. Growth , vol.311 , pp. 3080
- Liu, J.Q.¹ Wang, J.F.² Liu, Y.F.³ Huang, K.⁴ Hu, X.J.⁵ Zhang, Y.M.⁶ Xu, Y.⁷ Xu, K.⁸ Yang, H.⁹

11
- 4944240278
- 0031-9007,. 10.1103/PhysRevLett.79.2835
- Z. Liliental-Weber, Y. Chen, S. Ruvimov, and J. Washburn, Phys. Rev. Lett. 0031-9007 79, 2835 (1997). 10.1103/PhysRevLett.79.2835
- (1997) Phys. Rev. Lett. , vol.79 , pp. 2835
- Liliental-Weber, Z.¹ Chen, Y.² Ruvimov, S.³ Washburn, J.⁴

12
- 34247484094
- 1742-6588,. 10.1088/1742-6596/61/1/019
- J. C. Moore, J. E. Ortiz, J. Xie, H. Morko̧, and A. A. Baski, J. Phys.: Conf. Ser. 1742-6588 61, 90 (2007). 10.1088/1742-6596/61/1/019
- (2007) J. Phys.: Conf. Ser. , vol.61 , pp. 90
- Moore, J.C.¹ Ortiz, J.E.² Xie, J.³ Morko̧, H.⁴ Baski, A.A.⁵

13
- 31644446727
- 0.75N/GaN grown by molecular-beam epitaxy
- DOI 10.1063/1.2159547, 023703
- H. Zhang, E. J. Miller, and E. T. Yu, J. Appl. Phys. 0021-8979 99, 023703 (2006). 10.1063/1.2159547 (Pubitemid 43172389)
- (2006) Journal of Applied Physics , vol.99 , Issue.2 , pp. 1-6
- Zhang, H.¹ Miller, E.J.² Yu, E.T.³

14
- 49749125293
- 0021-8979,. 10.1063/1.2968442
- S. Fernández-Garrido, G. Koblmüller, E. Calleja, and J. S. Speck, J. Appl. Phys. 0021-8979 104, 033541 (2008). 10.1063/1.2968442
- (2008) J. Appl. Phys. , vol.104 , pp. 033541
- Fernández-Garrido, S.¹ Koblmüller, G.² Calleja, E.³ Speck, J.S.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.