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Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2864-2866

Pseudomorphic growth of thick n-type AlxGa1-xN layers on low-defect-density bulk AlN substrates for UV LED applications

(6) Grandusky, J R a Smart, J A a Mendrick, M C a Schowalter, L J a Chen, K X b Schubert, E F b

a Crystal IS Inc (United States)

b RENSSELAER POLYTECHNIC INSTITUTE (United States)

Author keywords

A3. Metal organic vapor phase epitaxy; B1. Nitrides; B3. Light emitting diodes

Indexed keywords

A3. METAL-ORGANIC VAPOR PHASE EPITAXY; B1. NITRIDES; B3. LIGHT-EMITTING DIODES; BULK ALN; CRITICAL THICKNESS; HIGH-POWER; LOW DEFECT DENSITIES; ORDER OF MAGNITUDE; PSEUDOMORPHIC GROWTH; PSEUDOMORPHIC LAYERS; UV LEDS;

ALUMINUM; CRYSTAL GROWTH; CURRENT DENSITY; DEFECT DENSITY; DEFECTS; LIGHT EMISSION; LIGHT EMITTING DIODES; NITRIDES; ORGANIC LIGHT EMITTING DIODES (OLED); RESISTORS; SUBSTRATES; ULTRAVIOLET INSTRUMENTS; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 65749088080 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2009.01.101 Document Type: Article

Times cited : (89)

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