Extremely low on-resistance and high breakdown voltage observed in Vertical GaN Schottky barrier diodes with high-mobility drift layers on low-dislocation-density GaN substrates

Applied Physics Express

Volumn 3, Issue 8, 2010, Pages

  Saitoh, Yu ^a   Sumiyoshi, Kazuhide ^a   Okada, Masaya ^a   Horii, Taku ^a   Miyazaki, Tomihito ^a   Shiomi, Hiromu ^a   Ueno, Masaki ^a   Katayama, Koji ^a   Kiyama, Makoto ^a   Nakamura, Takao ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN VOLTAGE; DRIFT LAYERS; FIGURE OF MERIT; FREESTANDING GAN SUBSTRATES; GAN SUBSTRATE; GROWTH CONDITIONS; HIGH BREAKDOWN VOLTAGE; HIGH MOBILITY; HIGH QUALITY; LOW-DISLOCATION-DENSITY; ON-RESISTANCE; PHOTOLUMINESCENCE MEASUREMENTS; SPECIFIC-ON-RESISTANCE; YELLOW LUMINESCENCE;

ELECTRIC BREAKDOWN; ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SINGLE CRYSTALS;

GALLIUM ALLOYS;

EID: 77955505780     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.081001     Document Type: Article

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