Progress on n-type doping of algan alloys on aln single crystal substrates for uv optoelectronic applications

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2031-2033

  Collazo, Ramón ^a   Mita, Seiji ^b   Xie, Jinqiao ^b   Rice, Anthony ^a   Tweedie, James ^a   Dalmau, Rafael ^b   Sitar, Zlatko ^a  

^a North Carolina State University   (United States)

^b HexaTech Inc   (United States)

Author keywords

Aluminium gallium nitride; Aluminium nitride; N type doping; UV light emitting diodes

Indexed keywords

AL COMPOSITION; AL CONTENT; ALGAN; ALGAN FILMS; ALN; ALN LAYERS; ALN SINGLE CRYSTALS; ALN SUBSTRATES; BUILDING BLOCKES; CARRIER ACTIVATION ENERGY; COMPENSATION RATIO; DEEP UV LIGHT EMITTING DIODES; HIGH-POWER ELECTRONIC DEVICES; HOMOEPITAXIAL; N-TYPE DOPING; ROOM-TEMPERATURE RESISTIVITY; SAPPHIRE SUBSTRATES; SI-DOPING; UV OPTOELECTRONICS;

ACTIVATION ENERGY; ALUMINUM; ALUMINUM COMPOUNDS; CARRIER CONCENTRATION; CRYSTAL IMPURITIES; ELECTRIC POWER SYSTEMS; ELECTRIC RESISTANCE; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; SAPPHIRE; SEMICONDUCTOR DOPING; SILICON WAFERS; SINGLE CRYSTALS; SUBSTRATES; SUPERCONDUCTING MATERIALS;

ALUMINUM ALLOYS;

EID: 79960740655     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000964     Document Type: Article

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