Evaluation of AlGaN-based deep ultraviolet emitter active regions by temperature dependent time-resolved photoluminescence

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 10, 2010, Pages 2390-2393

  Garrett, G A ^a   Sampath, A V ^a   Shen, H ^a   Wraback, M ^a   Sun, W ^b   Shatalov, M ^b   Hu, X ^b   Yang, J ^b   Bilenko, Y ^b   Lunev, A ^b   Shur, M S ^b   Gaska, R ^b   Grandusky, J R ^c   Schowalter, L J ^c  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^c Crystal IS Inc   (United States)

Author keywords

AlGaN; Defects; Dislocations; MBE; Nanostructures; Time resolved photoluminescence

Indexed keywords

ACTIVE REGIONS; ALGAN; CARRIER LOCALIZATION; DEEP ULTRAVIOLET; DEEP-UV; DISLOCATION DENSITIES; DISLOCATIONS; INTERFACE QUALITY; MBE; TEMPERATURE DEPENDENT; TIME-RESOLVED PHOTOLUMINESCENCE;

DEFECTS; NANOSTRUCTURES; OPTOELECTRONIC DEVICES; POINT DEFECTS; ULTRAVIOLET DEVICES;

PHOTOLUMINESCENCE;

EID: 78449264720     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983906     Document Type: Article

References (4)

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4. J. R. Grandusky, J. A. Smart, M. C. Mendrick, L. J. Schowalter, K. X. Chen, and E. F. Schubert, J. Cryst. Growth 311, 2864 (2009).