Advances in group III-nitride-based deep UV light-emitting diode technology

Semiconductor Science and Technology

Volumn 26, Issue 1, 2011, Pages

  Kneissl, M ^a,b   Kolbe, T ^a   Chua, C ^c   Kueller, V ^b   Lobo, N ^a   Stellmach, J ^a   Knauer, A ^b   Rodriguez, H ^b   Einfeldt, S ^b   Yang, Z ^c   Johnson, N M ^a   Weyers, M ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^c PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAINN; DEEP UV; DEVICE PERFORMANCE; GROUP III; HIGH EFFICIENCY; PERFORMANCE-LIMITING FACTORS; UV LEDS; UV LIGHT;

LIGHT EMISSION; NITRIDES;

LIGHT EMITTING DIODES;

EID: 79551708214     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/1/014036     Document Type: Article

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