Fundamentals of power semiconductor devices

Fundamentals of Power Semiconductor Devices

Volumn , Issue , 2008, Pages 1-1069

  Baliga, B Jayant ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

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[No Author keywords available]

Indexed keywords

EID: 84889971160     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1007/978-0-387-47314-7     Document Type: Book

References (322)

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129. M. Bhatnagar, P.K. McLarty, and B.J. Baliga, "Silicon-Carbide High-Voltage (400 V) Schottky Barrier Diodes", IEEE Electron Device Letters, Vol. 13, pp. 501-503, 1992.
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168. B.J. Baliga, "MOSFET Devices Having Linear Transfer Characteristics When Operating in Velocity Saturation Mode and Methods of Forming and Operating Same", U.S. Patent Number 6, 545, 316, April 8, 2003.
169. Y. Taur and T.K. Ning, "Fundamentals of Modern VLSI Devices", Cambridge University Press, Cambridge, UK.
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171. B.J. Baliga, "Power Semiconductor Device Figure of Merit for High Frequency Applications", IEEE Electron Device Letters, vol. EDL-10, pp. 455-457, 1989.
172. B.J. Baliga and D. Alok, "Paradigm Shift in Planar Power MOSFET Technology", Power Electronics Technology Magazine, pp. 24-32, November 2003.
173. B.J. Baliga, "Vertical Power Devices Having Retrograde Doped Transition Regions Therein", U.S. Patent 6, 784, 486, August 31, 2004.
174. B.K. Bose, "Power Electronics and Variable Frequency Drives", IEEE Press, New York, 1997.
175. B.J. Baliga and J.P. Walden, "Improving the Reverse Recovery of Power MOSFET Integral Diodes by Electron Irradiation", Solid-State Electronics, Vol. 26, pp. 1133-1141, 1983.
176. GS = 2.7 V", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 411-414, 1998.
177. dson 12 V p-Channel Trench MOSFET", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 303-306, 1999.
178. T. Syau, P. Venkatraman, and B.J. Baliga, "Comparison of Ultra-Low Specific On-Resistance U-MOSFET Structures: The ACCUFET, EXTFET, INVFET, and Conventional U-MOSFETs", IEEE Transactions on Electron Devices, vol. ED-41, pp. 800-808, 1994.
179. B.J. Baliga, "Silicon Carbide Power Devices", World Scientific, Singapore, 2006.
180. A. Mihaila et al., "Static and Dynamic Behavior of SiC JFET/Si MOSFET Cascode Configuration for High-Performance Power Switches", Silicon Carbide and Related Materials - 2001, Material Science Forum, Vol. 389-393, pp. 1239-1242, 2002.
181. B.J. Baliga and M. Bhatnagar, "Methods of Fabricating Silicon Carbide Field Effect Transistors", U.S. Patent 5, 322, 802, June 21, 1994.
182. J.N. Shenoy, J.A. Cooper, and M.R. Melloch, "High Voltage Double-Implanted Power MOSFETs in 6H-SiC", IEEE Electron Device Letters, Vol. 18, pp. 93-95, 1997.
183. D. Alok, P. McLarty, and B.J. Baliga, "Electrical Properties of Thermal Oxide Grown on N-type 6H-Silicon Carbide", Applied Physics Letters, Vol. 64, pp. 2845-2846, 1994.
184. J.B. Casady et al., "4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures", Materials Research Society Symposium Proceedings, Vol. 483, pp. 27-38, 1998.
185. B.J. Baliga, "Silicon Carbide Semiconductor Devices Having Buried Silicon Carbide Conduction Barrier Layers Therein", U.S. Patent 5, 543, 637, August 6, 1996.
186. S.T. Sheppard, M.R. Melloch, and J.A. Cooper, "Characteristics of Inversion-Channel and Buried-Channel MOS Devices in 6H-SiC", IEEE Transactions on Electron Devices, Vol. 41, pp. 1257-1264, 1994.
187. N. Thapar and B.J. Baliga, "Analytical Model for the Threshold Voltage of Accumulation Channel MOS-Gated Devices", Solid-State Electronics, Vol. 42, pp. 1975-1979, 1998.
188. P.M. Shenoy and B.J. Baliga, "The Planar 6H-SiC ACCUFET", IEEE Electron Device Letters, Vol. 18, pp. 589-591, 1997.
189. J.W. Palmour et al., "4H-Silicon Carbide Power Switching Devices", Silicon Carbide and Related Materials 1995, Institute of Physics Conference Series, Vol. 142, pp. 813-816, 1996.
190. B.J. Baliga, "Silicon Carbide Switching Device with Rectifying Gate", U.S. Patent 5, 396, 085, March 7, 1995.
191. S. Sridevan and B.J. Baliga, "Lateral n-Channel Inversion-Mode 4H-SiC MOSFETs", IEEE Electron Device Letters, Vol. 19, pp. 228-230, 1998.
192. Y. Li, J.A. Cooper, and M.A. Capano, "High Voltage (3 kV) UMOSFETs in 4H-SiC", IEEE Transactions on Electron Devices, Vol. 49, pp. 972-975, 2002.
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194. B.J. Baliga, "Power Semiconductor Devices Having Improved High Frequency Switching and Breakdown Characteristics", U.S. Patent 5, 998, 833, December 7, 1999.
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202. B.J. Baliga, "Enhancement and Depletion Mode Vertical Channel MOS Gated Thyristors", Electronics Letters, Vol. 15, pp. 645-647, 1979.
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207. G.E. Possin, M.S. Adler, and B.J. Baliga, "Measurement of the p-n Product in Heavily Doped Epitaxial Emitters", IEEE Transactions on Electron Devices, vol. ED-31, pp. 3-17, 1984.
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217. F.F. Oettinger, D.L. Blackburn, and S. Rubin, "Thermal Characteristics of Power Transistors", IEEE Transactions on Electron Devices, vol. ED-23, pp. 831-838, 1976.
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232. T. Horigome et al., "A 100 kV Thyristor Converter for High Voltage DC Transmission", IEEE Transactions on Electron Devices, vol. ED-17, pp. 809-815, 1976.
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241. B.J. Baliga et al., "The Insulated Gate Transistor", IEEE Transactions on Electron Devices, vol. ED-31, pp. 821-828, 1984.
242. B.J. Baliga, "Enhancement and Depletion Mode Vertical Channel MOS-Gated Thyristors", Electronics Letters, Vol. 15, pp. 645-647, 1979
243. B.J. Baliga, "How the Super-Transistor Works", Scientific American Magazine, Special Issue on 'The Solid-State-Century', pp. 34-41, January 22, 1998
244. N. Zommer, "The Monolithic HV BIPMOS", IEEE International Electron Devices Meeting, Abstract 11.5, pp. 263-266, 1981
245. D.Y. Chen and S. Chin, "Design Considerations for FET-Gated Power Transistors", IEEE Transactions on Electron Devices, vol. ED-31, pp. 1834-1837, 1984
246. B.J. Baliga, "Evolution of MOS-Bipolar Power Semiconductor Technology", Proceedings of the IEEE, Vol. 74, pp. 409-418, 1988
247. B.J. Baliga et al., "The Insulated Gate Rectifier: A New Power Switching Device", IEEE International Electron Devices Meeting, Abstract 10.6, pp. 264-267, 1982
248. J.P. Russell et al., "The COMFET", IEEE Electron Device Letters, vol. EDL-4, pp. 63-65, 1983
249. B.J. Baliga et al., "The Insulated Gate Transistor: A New Three-Terminal MOS-Controlled Bipolar Power Device", IEEE Transactions on Electron Devices, vol. ED-31, pp. 821-828, 1984
250. H.R. Chang et al., "Insulated Gate Bipolar Transistor (IGBT) with a Trench Gate Structure", IEEE International Electron Devices Meeting, Abstract 29.5, pp. 674-677, 1987
251. M. Kitagawa et al., "A 4, 500 V Injection Enhanced Insulated Gate Bipolar Transistor (IEGT) Operating in a Mode Similar to a Thyristor", IEEE International Electron Devices Meeting, Abstract 28.3.1, pp. 679-682, 1993
252. M. Takei, Y. Harada, and K. Ueno, "600 V IGBT with Reverse Blocking Capability", IEEE International Symposium on Power Semiconductor Devices and ICs, Abstract 11.1, pp. 413-416, 2001
253. T. Naito et al., "1200 V Reverse Blocking IGBT with Low Loss for Matrix Converter", IEEE International Symposium on Power Semiconductor Devices and ICs, Abstract 3.2, pp. 125-128, 2004
254. H. Takahashi, M. Kaneda, and T. Minato, "1200 V Class Reverse Blocking IGBT for AC Matrix Converter", IEEE International Symposium on Power Semiconductor Devices and ICs, Abstract 3.1, pp. 121-124, 2004
255. N. Tokuda, M. Kaneda, and T. Minato, "An Ultra-Small Isolation Area for 600 V Class Reverse Blocking IGBT with Deep Trench Isolation Process", IEEE International Symposium on Power Semiconductor Devices and ICs, Abstract 3.3, pp. 129-132, 2004
256. H. Shigekane, H. Kirihata, and Y. Uchida, "Developments in Modern High Power Semiconductor Devices", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 16-21, 1993
257. B.J. Baliga and M.S. Adler, "Measurement of Carrier Lifetime Profiles in Diffused Layers of Semiconductors", IEEE Transactions on Electron Devices, vol. ED-25, pp. 472-477, 1978
258. D.J. Roulston, N.D. Arora, and S.G. Chamberlain, "Modeling and Measurement of Minority Carrier Lifetime Versus Doping in Diffused Layers", IEEE Transactions on Electron Devices, vol. ED-29, pp. 284-291, 1982
259. Medici User's Manual, Avant! Corporation, Fremont, CA, 2001
260. B.J. Baliga, "Power Semiconductor Devices for Variable Frequency Drives", Proceedings of the IEEE, Vol. 82, pp. 1112-1122, 1994
261. A.R. Hefner and D.L. Blackburn, "An Analytical Model for the Steady-State and Transient Characteristics of the Power Insulated Gate Bipolar Transistor", Solid-State Electronics, Vol. 31, pp. 1513-1532, 1988
262. B.G. Streetman and S.K. Banerjee, "Solid State Electronic Devices", 6th Edition, pp. 190-192, 2006
263. A.R. Hefner and D.L. Blackburn, "A Performance Trade-Off for the Insulated Gate Bipolar Transistor: Buffer Layer Versus Base Lifetime Reduction", IEEE Transactions on Power Electronics, vol. PE2, pp. 194-207, 1987
264. M. Otsuki et al., "The 3rd Generation IGBT Toward a Limitation of IGBT Performance", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 24-29, 1993
265. F. Bauer et al., "A Comparison of Emitter Concepts for High Voltage IGBTs", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 230-235, 1995
266. K. Mochizuki et al., "Examination of Punch-Through IGBT (PT-IGBT) for High Voltage and High Current Applications", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 237-240, 1997
267. B.J. Baliga, "Analysis of the Output Conductance of Insulated Gate Transistors, IEEE Electron Device Letters", Vol. EDL-7, pp. 686-688, 1986
268. Arthur D. Little, Inc., "Opportunities for Energy Savings in the Residential and Commercial Sectors with High-Efficiency Electric Motors", U.S. Department of Energy Contract No. DE-AC01-90CE23821, December 1999
269. B.G. Streetman and S.K. Banerjee, "Solid State Electronic Devices", 6th Edition, p. 141, Prentice Hall, Englewood Cliffs, NJ, 2006
270. B.J. Baliga, "Analysis of Insulated Gate Transistor Turn-Off Characteristics", IEEE Electron Device Letters, vol. EDL-6, pp. 74-77, 1985
271. T. Laska et al., "The Field-Stop IGBT (FS-IGBT)", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 355-358, 2000
272. T. Takahashi et al., "A Design Concept for the Low Turn-Off Loss 4.5 kV Trench IGBT", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 51-54, 1998
273. S. Wang, "Fundamentals of Semiconductor Theory and Device Physics", pp. 312-316, Prentice Hall, Englewood Cliffs, NJ, 1989
274. M.F. Chang et al., "Comparison of N and P Channel IGTs", IEEE International Electron Devices Meeting, Abstract 10.6, pp. 278-281, 1984
275. B.J. Baliga, "Gate Enhanced Rectifier", U.S. Patent 4, 969, 028, Originally Filed December 2, 1980, Issued November 6, 1990
276. B.J. Baliga et al., "Suppressing Latch-up in Insulated Gate Transistors", IEEE Electron Device Letters, vol. EDL-5, pp. 323-325, 1984
277. B.J. Baliga, "Temperature Behavior of Insulated Gate Transistor Characteristics", Solid-State Electronics, Vol. 28, pp. 289-297, 1985
278. S. Eranen and M. Blomberg, "The Vertical IGBT with Implanted Buried Layer", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 211-214, 1991
279. A. Nakagawa et al., "Non-Latch-Up 1200 V, 75A Bipolar-Mode MOSFET with Large SOA", IEEE International Electron Devices Meeting, Abstract 16.8, pp. 860-861, 1984
280. N. Thapar and B.J. Baliga, "A New IGBT Structure with a Wider Safe Operating Area", International Symposium on Power Semiconductor Devices and ICs, pp. 177-182, 1994
281. H. Yilmaz, "Cell Geometry Effect on IGT Latch-up", IEEE Electron Device Letters, vol. EDL-6, pp. 419-421, 1985
282. B.J. Baliga et al., "New Cell Designs for Improved IGBT Safe-Operating-Area", IEEE International Electron Devices Meeting, Abstract 34.5, pp. 809-812, 1988
283. V. Parthasarathy et al., "Cell Optimization for 500-V n-Channel IGBTs", IEEE International Symposium on Power Semiconductor Devices and ICs, Abstract 3.5, pp. 69-74, 1994
284. K. Yoshikawa et al., "A Study on Wide RBSOA of 4.5kV Power-Pack IGBT", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 117-120, 2001
285. T. Ogura et al., "Turn-Off Switching Analysis Considering Dynamic Avalanche Effect for Low Turn-Off Loss High-Voltage IGBT", IEEE Transactions on Electron Devices, vol. ED-51, pp. 629-635, 2004
286. J.G. Bauer et al., "Investigations of the Ruggedness Limit of 6.5kV IGBT", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 71-74, 2005
287. H. Hagino et al., "An Experimental and Numerical Study on the Forward Biased SOA of IGBTs", IEEE Transactions on Electron Devices, vol. ED-43, pp. 490-499, 1996
288. N. Iwamuro et al., "Numerical Analysis of Short-Circuit Safe Operating Area for p-Channel and n-Channel IGBTs", IEEE Transactions on Electron Devices, vol. ED-38, pp. 303-309, 1991
289. H.R. Chang and B.J. Baliga, "500-V n-Channel Insulated Gate Bipolar Transistor with a Trench Gate Structure", IEEE Transactions on Electron Devices, vol. ED-36, pp. 1824-1829, 1989
290. M. Harada et al., "600 V Trench IGBT in Comparison with Planar IGBT", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 411-416, 1994
291. A. Bhalla et al., "High Performance Wide Trench IGBTs for Motor Control Applications", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 41-44, 1999
292. T. Ogura et al., "4.5-kV Injection-Enhanced Gate Transistors with High Turn-Off Ruggedness", IEEE Transactions on Electron Devices, vol. ED-51, pp. 636-641, 2004
293. I. Omura et al., "Carrier Injection Enhancement Effect of High Voltage MOS Devices", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 217-220, 1997
294. R. Holtz, F. Bauer, and W. Fichtner, "On-State and Short Circuit Behavior of High Voltage Trench Gate IGBTs in Comparison with Planar IGBTs", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 224-229, 1995
295. R. Constapel, J. Korec, and B.J. Baliga, "Trench IGBTs with Integrated Diverter Structures", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 201-206, 1995
296. B.J. Baliga, "Methods for Forming Power Semiconductor Devices Having T-Shaped Gate Electrodes", U.S. Patent 6, 303, 410, Issued October 16, 2001
297. M. Nemoto and B.J. Baliga, "The Recessed-Gate IGBT Structure", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 149-152, 1999
298. T.P. Chow and B.J. Baliga, "Comparison of 300, 600, and 1200 V n-Channel Insulated Gate Transistors", IEEE Electron Device Letters, vol. EDL-6, pp. 161-163, 1985
299. P.M. Shenoy, J. Yedniak, and J. Gladish, "High Performance 300 V IGBTs", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 217-220, 2000
300. J.G. Bauer et al., "6.5 kV Modules Using IGBTs with Field Stop Technology", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 121-124, 2001
301. B.J. Baliga, "Temperature Behavior of Insulated Gate Transistor Characteristics", Solid-State Electronics, Vol. 28, pp. 289-297, 1985
302. B.J. Baliga and E. Sun, "Comparison of Gold, Platinum, and Electron Irradiation for Controlling Lifetime in Power Rectifiers", IEEE Transactions on Electron Devices, vol. ED-34, pp. 1103-1108, 1977
303. B.J. Baliga and J.P. Walden, "Improving the Reverse Recovery of Power MOSFET Integral Diodes by Electron Radiation", Solid-State Electronics, Vol. 26, pp. 1133-1141, 1983
304. B.J. Baliga, "Fast Switching Insulated Gate Transistors", IEEE Electron Device Letters, vol. EDL-4, pp. 452-454, 1983
305. B.J. Baliga, "Switching Speed Enhancement in Insulated Gate Transistors by Electron Irradiation", IEEE Transactions on Electron Devices, vol. ED-31, pp. 1790-1795, 1984
306. W.A. Strifler and B.J. Baliga, "Comparison of Neutron and Electron Irradiation for Controlling IGT Switching Speed", IEEE Transactions on Electron Devices, vol. ED-32, pp. 1629-1632, 1985
307. D. Silber et al., "Improved Dynamic Properties of GTO-Thyristors and Diodes by Proton Implantation", IEEE International Electron Devices Meeting, Abstract 6.6, pp. 162-165, 1985
308. H. Akiyama et al., "Partial Lifetime Control in IGBTs with Helium Irradiation Through Mask Patterns", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 187-191, 1991
309. Y. Konishi et al., "Optimized Local Lifetime Control for the Superior IGBTs", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 335-338, 1996
310. Y. Onishi et al., "Analysis on Device Structures for Next Generation IGBT", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 85-88, 1998
311. K. Matsushita, I. Omura, and T. Ogura, "Blocking Voltage Design Considerations for Deep Trench MOS Gate High Power Devices", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 256-260, 1995
312. M. Kitagawa et al., "4500 V IEGTs Having Switching Characteristics Superior to GTO", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 486-491, 1995
313. J.G. Bauer et al., "Investigations on the Ruggedness Limit of 6.5 kV IGBT", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 71-74, 2005
314. N. Thapar and B.J. Baliga, "Influence of the Trench Corner Design on Edge Termination of UMOS Power Devices", Solid-State Electronics, Vol. 41, pp. 1929-1936, 1997
315. T. Nitta et al., "A Design Concept for the Low Forward Voltage Drop 4500 V Trench IGBT", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 43-46, 1998
316. T.P. Chow et al., "P-Channel Vertical Insulated Gate Bipolar Transistors with Collector Short", IEEE International Electron Devices Meeting, Abstract 29.4, pp. 670-673, 1987
317. B.J. Baliga, "Semiconductor Device Having Rapid Removal of Majority Carriers from an Active Base Region there of at Device Turn-Off and Method of Fabricating this Device", U.S. Patent 4, 782, 379, Issued November 1, 1988
318. H. Takahashi et al., "A High Performance IGBT with New N+ Buffer Structure", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 474-479, 1995
319. H. Takahashi et al., "1200-V Reverse Conducting IGBT", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 133-136, 2004
320. H. Akiyama et al., "Effects of Shorted Collector on Characteristics of IGBTs", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 131-136, 1990
321. N. Iwamuro et al., "Switching Loss Analysis of Shorted Drain Non-Punch-Through and Punch-Through Type IGBTs in Voltage Resonant Circuit", IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 220-225, 1991
322. B.J. Baliga, "The Future of Power Semiconductor Device Technology", Proceedings of the IEEE, Vol. 89, pp. 822-832, 2001