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Volumn 277, Issue 1-4, 2005, Pages 6-12

Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE

(11) Richter, E a Hennig, Ch a Weyers, M a Habel, F b Tsay, J D b Liu, W Y b Bruckner P b Scholz, F b Makarov, Yu c Segal, A c Kaeppeler, J d

a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK (Germany)

b UNIVERSITY OF ULM (Germany)

c STR Inc (United States)

d AIXTRON AG (Germany)

Author keywords

A3. Vapor phase epitaxy; B2. III V semiconductors

Indexed keywords

CRACKS; GASES; GROWTH (MATERIALS); HYDROGEN; MATHEMATICAL MODELS; OPTIMIZATION; OPTOELECTRONIC DEVICES; SAPPHIRE; SEMICONDUCTOR LASERS; SILICON COMPOUNDS; VAPOR PHASE EPITAXY;

GROWTH PROCESS OPTIMIZATION; HETEROEPITAXIAL GROWTH; LLL-V SEMICONDUCTORS; SHORT WAVE LENGTH OPTOELECTRONICS;

GALLIUM NITRIDE;

EID: 20144379413 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.12.169 Document Type: Article

Times cited : (63)

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