Dislocations and stacking faults in hexagonal GaN

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 7, 2011, Pages 1566-1568

  Batyrev, I G ^a   Sarney, W L ^a   Zheleva, T S ^a   Nguyen, C ^a   Rice, B M ^a   Jones, K A ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

defect levels; hexagonal GaN; MOCVD; partial dislocations; simulations; stacking faults; TEM

Indexed keywords

CORE STRUCTURE; DEEP LEVEL; DEFECT LEVELS; EXPERIMENTAL DATA; EXTENDED DEFECT; FINITE SIZE; FIRST-PRINCIPLES CALCULATION; FORMATION ENERGIES; HALL MEASUREMENTS; HEXAGONAL GAN; HIGH TEMPERATURE; HIGH-RESOLUTION TEM; METAL ORGANIC; MOCVD GROWTH; P-TYPE DOPING; PARTIAL DISLOCATIONS; SHOCKLEY PARTIAL DISLOCATIONS; SIMULATIONS; THEORETICAL RESULT; VALENCE-BAND MAXIMUMS; VAPOUR DEPOSITION; WURTZITE GAN;

DEFECTS; GALLIUM NITRIDE; ION IMPLANTATION; ORGANOMETALLICS; TRANSMISSION ELECTRON MICROSCOPY; ZINC SULFIDE;

STACKING FAULTS;

EID: 79960085863     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201001061     Document Type: Article

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