8300V blocking voltage AlGaN/GaN power HFET with thick poly-AIN passivation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 861-864

  Uemoto, Yasuhiro ^a   Shibata, Daisuke ^a   Yanagihara, Manabu ^a   Ishida, Hidetoshi ^a   Matsuo, Hisayoshi ^a   Nagai, Shuichi ^b   Batta, Nagaraj ^b   Li, Ming ^b   Ueda, Tetsuzo ^a   Tanaka, Tsuyoshi ^a   Ueda, Daisuke ^a  

^a PANASONIC CORPORATION   (Japan)

^b Panasonic Corporation of North America   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; ELECTRON DEVICES; GALLIUM NITRIDE; HETEROJUNCTIONS; SAPPHIRE;

ALGAN/GAN; ALGAN/GAN HETEROJUNCTION; BLOCKING VOLTAGES; DRAIN ELECTRODES; HEAT DISSIPATION; LOW SPECIFIC ON-STATE RESISTANCE; ULTRA HIGH VOLTAGE; VIA-HOLES;

PASSIVATION;

EID: 50249183991     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419085     Document Type: Conference Paper

References (6)

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2. N. Tipirneni, A. Koudymov, V. Adivarahan, J. Yang, G. Simin, and M. Asif Khan, "The 1.6-ky AIGaN/GaN HEMTs", IEEE Electron Device Letters, vol.27, no.9, pp716-718, 2006.
3. C. S. Suh, Y. Dora, N. Fichtenbaum, L. McCarthy, S. Keller, and U. K. Mishra, "High-Breakdown Enhancement-Mode AIGaN/GaN HEMTs with Integrated Slant Field-Plate", IEDM Tech Dig., pp911-913, 2006
4. D. Ueda, "GaN Power Devices for Microwave/Switching Applications," DRC Conference Digest, pp.27-28, June, 2007
5. Y. Uemoto, M. Hikita, H. Ueno, H. Matsuo, H. Ishida, M. Yanagihara, T. Ueda, T. Tanaka, D. Ueda, "A Normally-off AIGaN/GaN Transistor with RonA=2.6mΩcm2 and BVds=640V Using Conductivity Modulation," IEDM Technical Digests, pp. 907-910, December 2006.
6. M. Hikita, M. Yanagihara, K. Nakazawa, H. Ueno, Y. Hirose, T. Ueda, Y. Uemoto, T. Tanaka, D. Ueda, and T. Egawa, "350V/150A AIGaN/GaN power HFET on Silicon substrate with source-via grounding (SVG) structure," IEEE Trans. Electron Device, vol.52, no.9, pp1963-1968, 2005