Surface chemistry and transport effects in GaN hydride vapor phase epitaxy

Journal of Crystal Growth

Volumn 270, Issue 3-4, 2004, Pages 384-395

  Segal, A S ^a   Kondratyev, A V ^a   Karpov, S Yu ^a   Martin, D ^b   Wagner, V ^b   Ilegems, M ^b  

^a SOFT IMPACT LTD   (Russian Federation)

^b EPFL   (Switzerland)

Author keywords

A1. Computer simulation; A1. Growth models; A3. Chloride vapor phase epitaxy; B1. Gallium compounds

Indexed keywords

ADSORPTION; COMPUTER SIMULATION; HETEROJUNCTIONS; MATHEMATICAL MODELS; PARAMETER ESTIMATION; REFLECTOMETERS; SURFACE CHEMISTRY; THERMODYNAMICS; VAPOR PHASE EPITAXY;

CHLORIDE VAPOR PHASE EPITAXY; EPITAXIAL LATERAL OVERGROWTH (ELOG); GROWTH MODELS; LASER REFLECTOMETRY;

GALLIUM COMPOUNDS;

EID: 4544352809     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.07.018     Document Type: Article

References (28)

1. O. Ambacher, J. Phys. D 31 (1998) 2653.
2. B. Monemar, J. Mater Sci. 10 (1999) 227.
3. R.J. Molnar, W. Götz, L.T. Romano, N.M. Johnson, J. Crystal Growth 178 (1997) 147.
4. O. Parillaud, V. Wagner, H.J. Buehlmann, M. Ilegems, MRS J. Nitride Semicond. Res. 3 (1998) 40.
5. R. Fornari, M. Bosi, N. Armani, G. Attolini, C. Ferrari, C. Pelosi, G. Salviati, Mater. Sci. Eng. B 79 (2001) 159.
6. W. Zhang, B.K. Meyer, Phys. Stat. Sol. 0 (2003) 1571.
7. O. Oda, T. Inoue, Y. Seki, K. Kainosho, S. Yaegashi, A. Wakahara, A. Yoshida, S. Kurai, Y. Yaraada, T. Taguchi, Phys. Stat. Sol. (A) 180 (2000) 51.
8. V. Wagner, O. Parillaud, H.J. Buhlmann, M. Ilegems, S. Gradecak, P. Stadelmann, T. Riemann, J. Christen, J. Appl. Phys. 92 (2002) 1307.
9. A.S. Usikov, D.V. Tsvetkov, M.A. Mastro, A.I. Pechnikov, V.A. Soukhoveev, Y.V. Shapovalova, O.V. Kovalenkov, G.H. Gainer, S. Yu. Karpov, V.A. Dmitriev, B. O'Meara, S.A. Gurevich, E.M. Arakcheeva, A.L. Zakhgeim, H. Helava, Phys. Stat. Sol. (C) 0 (2003) 2265.
10. M.A. Mastro, A. Usikov, D. Tsvetkov, V. Soukhoveev, G. Gainer, A. Pechnikov, B. Luo, F. Ren, K.H. Baik, S.J. Pearton, N. Kuznetsov, N. Shmidt, V. Dmitriev, Phys. Stat. Sol., 2004, in prepartion.
11. W. Seifert, G. Fitzl, E. Butter, J. Crystal Growth 52 (1981) 257.
12. R. Cadoret, J. Crystal Growth 205 (1999) 123.
13. R. Cadoret, A. Trassoudaine, E. Aujol, Phys. Stat. Sol. (A) 183 (2001) 5.
14. A. Koukitu, Sh. Hama, T. Taki, H. Seki, Jpn. J. Appl. Phys. 37 (1998) 762.
15. S.Yu. Karpov, D.V. Zimina, Yu.N. Makarov, B. Beaumont, G. Nataf, P. Gibart, M. Heuken, H. Jürgensen, A. Krishna, Phys. Stat. Sol. (A) 176 (1999) 439.
16. S.Yu. Karpov, V.G. Prokofyev, E.V. Yakovlev, R.A. Talalaev, Yu.N. Makarov, MRS J. Nitride Semicond. Res. 4 (1999) 4.
17. D. Martin, J.F. Carlin, V. Wagner, H.J. Bühlmann, M. Ilegems, Phys. Stat. Sol. (B) 194 (2002) 520.
18. Yu.E. Egorov, A.I. Zhmakin, Comput. Mater. Sci. 11 (1998) 204.
19. C.R. Kleijn, in: M. Meyyappan (Ed.), Computational Modeling in Semiconductor Processing, Artech House, Boston, London, 1995, p. 97.
20. V. Ban, J. Electrochem. Soc. 119 (1972) 761.
21. I.N. Przhevalskii, S. Yu. Karpov, Yu.N. Makarov, MRS J. Nitride Semicond. Res. 3 (1998) 30.
22. S.S. Liu, D.A. Stevenson, J. Electrochem.Soc. 125 (1978) 1161.
23. M. Yumura, T. Asaba, Symp. Int. Combust. Proc. 18 (1981) 863.
24. S.Yu. Karpov, E.V. Yakovlev, R.A. Talalaev, Y.A. Shpolyanskiy, Y.N. Makarov, S.A. Lowry, in: M.D. Alendorf, M.L. Hitchman (Eds.), CVD XV: Proceedings of the 15th International Sympolium on CVD, vol. 2000-13, The Electrochemical Society Inc., Pennington NJ, 2000, p. 723.
25. A.S. Segal, A.P. Sid'ko, S.Yu. Karpov, Yu.N. Makarov, J. Crystal Growth 225 (2001) 268.
26. S. Yu. Karpov, Yu.N. Makarov, M.S. Ramm, MRS J. Nitride Semicond. Res. 2 (1997) 45.
27. N. Grandjean, J. Massies, F. Semond, S.Yu. Karpov, R.A. Talalaev, Appl. Phys. Lett. 74 (1999) 1854.
28. M. Mesrine, N. Grandjean, J. Massies, Appl.Phys.Lett 72 (1998) 350.