Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

Applied Physics Letters

Volumn 79, Issue 21, 2001, Pages 3527-3529

  Klein, P B ^a   Binari, S C ^a   Ikossi, K ^a   Wickenden, A E ^a,b   Koleske, D D ^a,c   Henry, R L ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035914883     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1418452     Document Type: Article

References (17)

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