Greatly improved performance of 340 nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer

Applied Physics Letters

Volumn 89, Issue 8, 2006, Pages

  Wang, T ^a   Lee, K B ^a   Bai, J ^a   Parbrook, P J ^a   Airey, R J ^a   Wang, Q ^a   Hill, G ^a   Ranalli, F ^a   Cullis, A G ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; GALLIUM NITRIDE; ULTRAVIOLET RADIATION;

ALN BUFFER LAYERS; HIGH RESOLUTION TRANSMISSION; THIN GAN INTERLAYERS;

LIGHT EMITTING DIODES;

EID: 33747817914     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2338784     Document Type: Article

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