Identification of important growth parameters for the development of high quality Alx>0.5Ga1-xN grown by metal organic chemical vapor deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 25, Issue 3, 2007, Pages 441-447

  Grandusky, J R ^a   Jamil, M ^a   Jindal, V ^a   Tripathi, N ^a   Shahedipour Sandvik, F ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA FLOW RATE; CRYSTALLINE QUALITY; SOLID PHASE;

AMMONIA; ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; SURFACE MORPHOLOGY;

ALUMINUM ALLOYS;

EID: 34047158265     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2713409     Document Type: Article

References (28)

1. T. Obata, H. Hirayama, Y. Aoyagi, and K. Ishibashi, Phys. Status Solidi A 201, 2803 (2004).
2. M. L. Nakarmi, K. H. Kim, M. Khizar, Z. Y. Fan, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 86, 092108 (2005).
3. Y. J. Lin, Jpn. J. Appl. Phys., Part 2 45, L86 (2006).
4. W. H. Sun et al., Appl. Phys. Lett. 85, 531 (2004).
5. K. Mayes, A. Yasan, R. McClintock, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi, Appl. Phys. Lett. 84, 1046 (2004).
6. A. J. Fischer, et al., Appl. Phys. Lett. 84, 3394 (2004).
7. H. Morkoç, Nitride Semiconductors and Devices (Springer, Berlin, 1999), Vol. 32, Chap. 2, p. 44.
8. D. K. Wickenden, C. B. Bargeron, W. A. Bryden, J. Miragliotta, and T. J. Kistenmacher, Appl. Phys. Lett. 65, 2024 (1994).
9. Y. Koide, N. Itoh, K. Itoh, N. Sawaki, and I. Akasaki, Jpn. J. Appl. Phys., Part 1 27, 1156 (1988).
10. C. McAleese, M. J. Kappers, F. D. G. Rayment, D. M. Graham, P. Dawson, E. J. Thrush, and C. J. Humphreys, Tenth European Workshop on Metalorganic Vapour Phase Epitaxy, Ecotekne Congress Centre, PS. VI.08, 2003 (Università degli Studi di Lecce, Lecce, 2003).
11. K. Hiramatsu, S. Itoh, H. Amano, I. Akasaki, N. Kuwano, T. Shiraishi, and K. Oki, J. Cryst. Growth 115, 628 (1991).
12. S. Takigawa, K. Furuta, S. Shimizu, X. Shen, T. Kitamura, and H. Okumura, Jpn. J. Appl. Phys., Part 1 43, 952 (2004).
13. J. L. Weyher, S. Muller, I. Grzegory, and S. Porowski, J. Cryst. Growth 182, 17 (1997).
14. Y. Takeda, M. Tabuchi, H. Amano, and I. Akasaki, Surf. Rev. Lett. 10, 537 (2003).
15. Y. Kobayashi, T. Akasaka, and N. Kobayashi, Jpn. J. Appl. Phys., Part 2 37, L1208 (1998).
16. Y. Le Vaillant et al., J. Cryst. Growth 189/190, 282 (1998).
17. D. G. Zhao, J. J. Zhu, Z. S. Liu, S. M. Zhang, H. Yang, and D. S. Jiang, Appl. Phys. Lett. 85, 1499 (2004).
18. T. Ito, K. Ohtsuka, K. Kuwahara, M. Sumiya, Y. Takano, and S. Fuke, J. Cryst. Growth 205, 20 (1999).
19. O. Briot, S. Clur, and R. L. Aulombard, Appl. Phys. Lett. 71, 1990 (1997).
20. T. G. Mihopoulos, V. Gupta, and K. F. Jensen, J. Cryst. Growth 195, 733 (1998).
21. J. Han, J. J. Figiel, M. H. Crawford, M. A. Banas, M. E. Bartram, R. M. Biefeld, Y. K. Song, and A. V. Nurmikko, J. Cryst. Growth 195, 291 (1998).
22. J. R. Creighton, G. T. Wang, W. G. Breiland, and M. E. Coltrin, J. Cryst. Growth 261, 204 (2004).
23. A. V. Kondratyev, R. A. Talalaev, W. V. Lundin, A. V. Sakharov, A. V. Tsatsul'nikov, E. E. Zavarin, A. V. Fomin, and D. S. Sizov, J. Cryst. Growth 272, 420 (2004).
24. A. V. Lobanova, K. M. Mazaev, R. A. Talalaev, M. Leys, S. Boeykens, K. Cheng, and S. Degroote, J. Cryst. Growth 287, 601 (2006).
25. D. G. Zhao, J. J. Zhu, D. S. Jiang, H. Yang, J. W. Liang, X. Y. Li, and H. M. Gong, J. Cryst. Growth 289, 72 (2006).
26. H. M. Wang, J. P. Zhang, C. Q. Chen, Q. Farced, J. W. Yang, and M. A. Khan, Appl. Phys. Lett. 81, 604 (2002).
27. Y. Taniyasu, M. Kasu, and N. Kobayashi, Appl. Phys. Lett. 81, 1255 (2002).
28. D. D. Koleske, A. E. Wickenden, R. L. Henry, and M. E. Twigg, J. Cryst. Growth 242, 55 (2002).