Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2

IEEE Transactions on Electron Devices

Volumn 55, Issue 3, 2008, Pages 937-941

  Kuzmik, Jan ^a   Pozzovivo, Gianmauro ^b   Abermann, Stephan ^b   Carlin, Jean François ^c   Gonschorek, Marcus ^c   Feltin, Eric ^c   Grandjean, Nicolas ^c   Bertagnolli, Emmerich ^b   Strasser, Gottfried ^b   Pogany, Dionyz ^b  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^c EPFL   (Switzerland)

Author keywords

GaN; HEMTs; InAlN GaN

Indexed keywords

ANNEALING; DRAIN CURRENT; GATE DIELECTRICS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; TRANSCONDUCTANCE;

CARRIER DEPLETION EFFECT; GATE INSULATION; PULSED DRAIN-CURRENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 40949121073     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.915089     Document Type: Article

References (23)

1. J. Kuzmik, "Power electronics on InAlN/(In)GaN: Prospect for a record performance," IEEE Electron Device Lett., vol. 22, no. 11, pp. 510-512, Nov. 2001.
2. J. Kuzmik, A. Kostopoulos, G. Konstantinidis, J.-F. Carlin, A. Georgakilas, and D. Pogany, "InAlN/GaN HEMTs: A first insight into technological optimization," IEEE Trans. Electron Devices, vol. 53, no. 3, pp. 422-426, Mar. 2006.
3. F. Medjdoub, J.-F. Carlin, M. Gonschorek, M. A. Py, N. Grandjean, S. Vandebrouck, C. Gaquiere, J. C. Dejaeger, and E. Kohn, "Small-signal characteristics of AlInN/GaN HEMTs," Electron. Lett., vol. 42, no. 13, pp. 779-780, Jun. 2006.
4. M. Gonschorek, J.-F. Carlin, E. Feltin, M. A. Py, and N. Grandjean, "High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures," Appl. Phys. Lett., vol. 89, pp. 062106-1-062106-3, 2006.
5. J. Kuzmik, J.-F. Carlin, M. Gonschorek, A. Kostopoulos, G. Konstantinidis, G. Pozzovivo, S. Golka, A. Georgakilas, N. Grandjean, G. Strasser, and D. Pogany, "Gate-lag and drain-lag effects in (GaN/InAlN/GaN and InAlN/AlN/GaN HEMTs," Phys. Stat. Sol. (a), vol. 204, no. 6, pp. 2019-2022, 2007.
6. J. Kuzmik, S. Bychikhin, M. Neuburger, A. Dadgar, A. Krost, E. Kohn, and D. Pogany, "Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon," IEEE Trans. Electron Devices, vol. 52, no. 8, pp. 1698-1705, Aug. 2005.
7. K. Horio, H. Takayanagi, and H. Nakano, "Analysis of buffer-trapping effects on current collapse of GaN FETs," Phys. Stat. Sol. (c , vol. 3, no. 6, pp. 2346-2349, 2006.
8. B. H. Lee, C. D. Young, R. Choi, J. H. Sim, G. Bersuker, C. Y. Kang, R. Harris, G. A. Brown, K. Matthews, S. C. Song, N. Moumen, J. Barnett, P. Lysaght, K. S. Choi, H. C. Wen, C. Huffman, H. Alshareef, P. Majhi, S. Gopalari, J. Peterson, P. Kirsh, H.-J. Li, J. Gutt, M. Gardner, M. R. Huff, P. Zeizoff, R. W. Murto, L. Larson, and C. Ramiller, "Intrinsic characteristics of high-k devices and Implications of fast transient charging effects (FTCE)," in IEDM Tech. Dig., 2004, pp. 859-862.
9. V. Adivarahan, J. Yang, A. Koudymov, G. Simin, and M. A. Khan, "Stable CW operation of field-plated GaN-AlGaN MOSFETs at 19 W/mm," IEEE Electron Device Lett., vol. 26, no. 8, pp. 535-537, Aug. 2005.
10. 2 high-k dielectric for surface passivation and gate oxide," Semicond. Sci. Technol., vol. 22, pp. 522-527, 2007.
11. M. Marso, G. Heidelberger, K. M. Indlekofer, J. Bernat, A. Fox, P. Kordoš, and H. Lüth, "Origin of improved RE performance of AlGaN/GaN MOSFETs compared to HFETs," IEEE Trans. Electron Devices, vol. 53, no. 7, pp. 1517-1523, Jul. 2006.
12. 3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor," Appl. Phys. Lett., vol. 90, pp. 123513-1-123513-3, 2007.
13. 2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors," J. Vac. Sci. Technol. B, vol. 24, no. 2, pp. 575-581, Mar./Apr. 2006.
14. 2/(Al)GaN metal-oxide-semiconductor structures: Characterization and application," Semicond. Sci. Technol., vol. 19, pp. 1364-1368, 2004.
15. 2/AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors," Jpn. J. Appl. Phys., vol. 45, pp. 4985-4987, 2006.
16. xN grown by metal-organic chemical-vapor epitaxy," Appl. Phys. Lett., vol. 71, pp. 800-802, 1997.
17. 2 high-k dielectrics," Microelectron. Reliab., vol. 47, pp. 536-539, 2007.
18. 1-xN/GaN high electron mobility transistors annealed at 500°C," J. Vac. Sci. Technol. B vol. 24, no. 2, pp. L16-L18, Mar./Apr. 2006.
19. D. K. Schroder, Semiconductor Material and Device Characterization 2nd ed. New York: Wiley, 1998, pp. 143-166.
20. M. Kuball, G. J. Riedel, J. W. Pomeroy, A. Sarua, M. J. Uren, T. Martin, K. P. Hilton, J. O. Maclean, and D. J. Wallis, "Time resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy," IEEE Electron Device Lett., vol. 28, no. 2, pp. 86-89, Feb. 2007.
21. M. E. Levinshtein, P. A. Ivanov, M. A. Khan, G. Simin, J. Zhang, X. Hu, and J. Yang, "Mobility enhancement in AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistor," Semicond. Sci. Technol., vol. 18, pp. 666-669, 2003.
22. M. S. Shur, GaAs Devices and Circuits. New York: Plenum, 1987, pp. 309-320, 550.
23. G. Pozzovivo, J. Kuzmik, S. Golka, W. Schrenk, G. Strasser, D. Pogany, K. Čičo, M. Ťapajna, K. Fröhlich, J.-F. Carlin, M. Gonschorek, E. Feltin, and N. Grandjean, "Gate insulation and drain current saturation mechanism in InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors," Appl. Phys. Lett., to be published.