AlGaN/GaN heterostructure field-effect transistors with current gain cut-off frequency of 152 GHz on sapphire substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 16-19, 2005, Pages

  Higashiwaki, Masataka ^a   Matsui, Toshiaki ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

AlGaN; Catalytic chemical vapor deposition (Cat CVD); Current gain cut off frequency (ft); GaN; Heterostructure field effect transistor (HFET); Plasma assisted molecular beam epitaxy (PAMBE); Sapphire

Indexed keywords

ALUMINUM NITRIDE; CATALYSIS; ELECTRIC CURRENTS; GALLIUM NITRIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NATURAL FREQUENCIES; OSCILLATIONS; PASSIVATION; SAPPHIRE; SUBSTRATES;

ALGAN; CATALYTIC CHEMICAL VAPOR DEPOSITION (CAT-CVD); CURRENT GAIN CUT-OFF FREQUENCY (FT);

FIELD EFFECT TRANSISTORS;

EID: 23944475967     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L475     Document Type: Article

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