Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

Journal of Applied Physics

Volumn 108, Issue 4, 2010, Pages

  Rice, A ^a   Collazo, R ^a   Tweedie, J ^a   Dalmau, R ^b   Mita, S ^b   Xie, J ^b   Sitar, Z ^a  

^a North Carolina State University   (United States)

^b HexaTech Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN EPITAXIAL LAYERS; ALN SUBSTRATES; ALUMINUM OXIDES; ALUMINUM TRIHYDROXIDE; DAMAGED SURFACES; HIGH RESOLUTION X RAY DIFFRACTION; HOMOEPITAXIAL DEPOSITION; HYDROXIDE LAYERS; METALORGANIC CHEMICAL VAPOR DEPOSITION; RMS ROUGHNESS; SINGLE-CRYSTALLINE; STRAIN-FREE; SURFACE HYDROXIDE; SURFACE PREPARATION; THERMODYNAMIC MODEL; TOTAL PRESSURE; V/III RATIO;

ALUMINUM; ALUMINUM COATINGS; ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; COALESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOSPHORIC ACID; RESISTORS; SULFURIC ACID; WET ETCHING; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

SUBSTRATES;

EID: 77956298000     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3467522     Document Type: Conference Paper

References (31)

1. G. A. Slack and T. F. McNelly, J. Cryst. Growth JCRGAE 0022-0248 34, 263 (1976). 10.1016/0022-0248(76)90139-1
2. P. Bowen, J. G. Highfield, A. Mocellin, and T. A. Ring, J. Am. Ceram. Soc. JACTAW 0002-7820 73, 724 (1990). 10.1111/j.1151-2916.1990.tb06579.x
3. H. M. Liao, R. N. Sodhi, and T. W. Coyle, J. Vac. Sci. Technol. A JVTAD6 0734-2101 11, 2681 (1993). 10.1116/1.578626
4. M. Sternitzke, J. Am. Ceram. Soc. JACTAW 0002-7820 76, 2289 (1993). 10.1111/j.1151-2916.1993.tb07766.x
5. S. W. King, J. P. Barnak, M. D. Bremser, K. M. Tracy, C. Ronning, R. F. Davis, and R. J. Nemanich, J. Appl. Phys. JAPIAU 0021-8979 84, 5248 (1998). 10.1063/1.368814
6. L. M. Svedberg, K. C. Arndt, and M. J. Cima, J. Am. Ceram. Soc. JACTAW 0002-7820 83, 41 (2000). 10.1111/j.1151-2916.2000.tb01145.x
7. J. Li, M. Nakamura, T. Shirai, K. Matsumaru, C. Ishizaki, and K. Ishizaki, J. Am. Ceram. Soc. JACTAW 0002-7820 89, 937 (2006). 10.1111/j.1551-2916.2005.00767.x
8. R. Dalmau, R. Collazo, S. Mita, and Z. Sitar, J. Electron. Mater. JECMA5 0361-5235 36, 414 (2007). 10.1007/s11664-006-0044-x
9. H. Kawakami, K. Sakurai, K. Tsubouchi, and N. Mikoshiba, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 27, L161 (1988). 10.1143/JJAP.27.L161
10. A. Yamamoto, M. Tsujino, M. Ohkubo, and A. Hashimoto, J. Cryst. Growth JCRGAE 0022-0248 137, 415 (1994). 10.1016/0022-0248(94)90979-2
11. K. Masu, Y. Nakamura, T. Yamazaki, T. Shibata, M. Takahashi, and K. Tsubouchi, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 34, L760 (1995). 10.1143/JJAP.34.L760
12. K. Uchida, A. Watanabe, F. Yano, M. Kouguchi, T. Tanaka, and S. Minagawa, J. Appl. Phys. JAPIAU 0021-8979 79, 3487 (1996). 10.1063/1.361398
13. C. Heinlein, J. Grepstad, T. Berge, and H. Riechert, Appl. Phys. Lett. APPLAB 0003-6951 71, 341 (1997). 10.1063/1.119532
14. M. Yeadon, M. T. Marshall, F. Hamdani, S. Pekin, H. Morko̧, and J. M. Gibson, J. Appl. Phys. JAPIAU 0021-8979 83, 2847 (1998). 10.1063/1.367046
15. C. Heinlein, J. Grepstad, S. Einfeldt, D. Hommel, T. Berge, and A. P. Grande, J. Appl. Phys. JAPIAU 0021-8979 83, 6023 (1998). 10.1063/1.367470
16. Y. Cho, Y. Kim, E. R. Weber, S. Ruvimov, and Z. Liliental-Weber, J. Appl. Phys. JAPIAU 0021-8979 85, 7909 (1999). 10.1063/1.370606
17. T. Hashimoto, Y. Terakoshi, M. Yuri, M. Ishida, O. Imafuji, T. Sugino, and K. Itoh, J. Appl. Phys. JAPIAU 0021-8979 86, 3670 (1999). 10.1063/1.371276
18. M. Sumiya and S. Fuke, Appl. Surf. Sci. ASUSEE 0169-4332 244, 269 (2005). 10.1016/j.apsusc.2004.10.135
19. A. Koukitu, T. Taki, N. Takahashi, and H. Seki, J. Cryst. Growth JCRGAE 0022-0248 197, 99 (1999). 10.1016/S0022-0248(98)00894-X
20. A. Koukitu and Y. Kumagai, J. Phys.: Condens. Matter JCOMEL 0953-8984 13, 6907 (2001). 10.1088/0953-8984/13/32/303
21. W. K. Burton, N. Cabrera, and F. C. Frank, Philos. Trans. R. Soc. London, Ser. A PTRMAD 0962-8428 243, 300 (1951).
22. Z. G. Herro, D. Zhuang, R. Schlesser, R. Collazo, and Z. Sitar, J. Cryst. Growth JCRGAE 0022-0248 286, 205 (2006). 10.1016/j.jcrysgro.2005.10.074
23. D. Zhuang, R. Schlesser, and Z. Sitar, J. Cryst. Growth JCRGAE 0022-0248 287, 372 (2006). 10.1016/j.jcrysgro.2005.11.047
24. P. Lu, R. Collazo, R. F. Dalmau, G. Durkaya, N. Dietz, B. Raghothamachar, M. Dudley, and Z. Sitar, J. Cryst. Growth JCRGAE 0022-0248 312, 58 (2009). 10.1016/j.jcrysgro.2009.10.008
25. H. Helava, T. Chemekova, O. Avdeev, E. Mokhov, S. Nagalyuk, Y. Makarov, and M. Ramm, Phys. Status Solidi C ZZZZZZ 1610-1634 7, 2115 (2010). 10.1002/pssc.200983619
26. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-Ray Photoelectron Spectroscopy (Perkin-Elmer, Eden Prairie, MN, 1982), p. 252.
27. T. Tsuchida and H. Takahashi, J. Mater. Res. JMREEE 0884-2914 9, 2919 (1994). 10.1557/JMR.1994.2919
28. C. D. Wagner, D. A. Zatko, and R. H. Raymond, Anal. Chem. ANCHAM 0003-2700 52, 1445 (1980). 10.1021/ac50059a017
29. M. Digne, P. Sautet, P. Raybaud, H. Toulhoat, and E. Artacho, J. Phys. Chem. B JPCBFK 1089-5647 106, 5155 (2002). 10.1021/jp014182a
30. S. Mita, R. Collazo, A. Rice, R. F. Dalmau, and Z. Sitar, J. Appl. Phys. JAPIAU 0021-8979 104, 013521 (2008). 10.1063/1.2952027
31. C. Herring, Phys. Rev. PHRVAO 0031-899X 82, 87 (1951). 10.1103/PhysRev.82.87