Unintentionally doped n-type Al 0.67Ga 0.33N epilayers

Applied Physics Letters

Volumn 86, Issue 26, 2005, Pages 1-3

  Nakarmi, M L ^a   Nepal, N ^a   Lin, J Y ^a   Jiang, H X ^a  

^a KANSAS STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITY; EPILAYERS; FREE ELECTRON CONCENTRATION; ROOM TEMPERATURE;

ACTIVATION ENERGY; ALUMINUM ALLOYS; ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PHOTOLUMINESCENCE; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; X RAY DIFFRACTION ANALYSIS;

THIN FILMS;

EID: 22144433016     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1954875     Document Type: Article

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