Preparation of a freestanding AIN substrate from a thick AIN layer grown by hydride vapor phase epitaxy on a bulk AIN substrate prepared by physical vapor transport

Applied Physics Express

Volumn 5, Issue 5, 2012, Pages

  Kumagai, Yoshinao ^a   Kubota, Yuki ^b   Nagashima, Toru ^a,b   Kinoshita, Toru ^b   Dalmau, Rafael ^c   Schlesser, Raoul ^c   Moody, Baxter ^c   Xie, Jinqiao ^c   Murakami, Hisashi ^a   Koukitu, Akinori ^a   Sitar, Zlatko ^c,d  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b TOKUYAMA CORPORATION   (Japan)

^c HexaTech Inc   (United States)

^d North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FULL WIDTHS AT HALF MAXIMUMS; HIGH RESOLUTION X RAY DIFFRACTION; HYDRIDE VAPOR PHASE EPITAXY; OPTICAL QUALITIES; OPTICAL TRANSPARENCY; PHYSICAL VAPOR TRANSPORT; ROCKING CURVES; SKEW-SYMMETRIC;

EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM COMPOUNDS; VAPORS; X RAY DIFFRACTION;

SUBSTRATES;

EID: 84861359993     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.5.055504     Document Type: Article

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