Trapping effects and microwave power performance in AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices

Volumn 48, Issue 3, 2001, Pages 465-471

  Binari, S C ^a   Ikossi, K ^a   Roussos, J A ^a   Kruppa, W ^a   Park, D ^a   Dietrich, H B ^a   Koleske, D D ^a   Wickenden, A E ^a   Henry, R L ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

GaN; HEMT; Heterojunction; Microwave transistor; MODFET; Trapping

Indexed keywords

ASSOCIATION REACTIONS; CARRIER CONCENTRATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVE DEVICES; REDUCTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SURFACES;

ALUMINUM GALLIUM NITRIDE; BUFFER LAYERS; DRAIN CURRENT; GATE LAG; MICROWAVE POWER PERFORMANCE; MICROWAVE TRANSISTOR; POWER DENSITY; SURFACE TRAPPING; TRAPPING EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035278799     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.906437     Document Type: Article

References (21)

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