Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD

Journal of Crystal Growth

Volumn 256, Issue 3-4, 2003, Pages 248-253

  Chen, J ^a,b   Zhang, S M ^a   Zhang, B S ^a   Zhu, J J ^a   Shen, X M ^a   Feng, G ^a   Liu, J P ^a   Wang, Y T ^a   Yang, H ^a   Zheng, W C ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b SICHUAN UNIVERSITY   (China)

Author keywords

A1. In situ laser reflectometry; A1. Lateral overgrowth; A1. Surface morphology; A3. Metalorganic chemical vapor deposition; B1. GaN

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL REACTORS; FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NUCLEATION; SCANNING ELECTRON MICROSCOPY; THIN FILMS;

REACTOR PRESSURE;

CRYSTAL GROWTH;

EID: 0042170173     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01367-8     Document Type: Article

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