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Volumn 29, Issue 8, 2014, Pages

High power AlGaN ultraviolet light emitters

(13) Shatalov, Max a Sun, Wenhong a Jain, Rakesh a Lunev, Alex a Hu, Xuhong a Dobrinsky, Alex a Bilenko, Yuri a Yang, Jinwei a Garrett, Gregory A b Rodak, Lee E b Wraback, Michael b Shur, Michael c Gaska, Remis a

a SENSOR ELECTRONIC TECHNOLOGY INC (United States)

b U S ARMY RESEARCH LABORATORY (United States)

c RENSSELAER POLYTECHNIC INSTITUTE (United States)

Author keywords

light emitting diodes; nitrides; quantum wells; semiconductor; ultraviolet

Indexed keywords

NITRIDES; SAPPHIRE; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS;

DEEP ULTRAVIOLET; EPITAXIAL MATERIALS; EXTERNAL QUANTUM EFFICIENCY; OUTPUT POWER; SAPPHIRE SUBSTRATES; STRUCTURE DESIGN; ULTRAVIOLET; ULTRAVIOLET LIGHT EMITTERS;

LIGHT EMITTING DIODES;

EID: 84904641445 PISSN: 02681242 EISSN: 13616641 Source Type: Journal
DOI: 10.1088/0268-1242/29/8/084007 Document Type: Article

Times cited : (170)

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