Recent advances in GaN transistors for future emerging applications

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 6, 2009, Pages 1221-1227

  Yanagihara, Manabu ^a   Uemoto, Yasuhiro ^a   Ueda, Tetsuzo ^a   Tanaka, Tsuyoshi ^a   Ueda, Daisuke ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HFETS; ALN; BREAKDOWN VOLTAGE; CELLULAR BASE STATIONS; CHANNEL TEMPERATURE; EMERGING APPLICATIONS; FABRICATION COST; GATE INJECTION; GATE INSULATOR; GROWTH TECHNOLOGIES; HEAT SPREADERS; HIGH BREAKDOWN; HIGH THERMAL CONDUCTIVITY; IN-SITU; LOW NOISE FIGURE; MATERIAL SYSTEMS; MILLIMETER-WAVE COMMUNICATION; NOVEL DEVICES; POWER SWITCHING; SI SUBSTRATES; SPECIFIC-ON-RESISTANCE; THERMAL RESISTANCE;

DRAIN CURRENT; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; IONIZATION OF GASES; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; MOSFET DEVICES; PASSIVATION; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SWITCHING CIRCUITS; THERMAL CONDUCTIVITY; TRANSISTORS;

GALLIUM ALLOYS;

EID: 67649965915     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200880968     Document Type: Article

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