EUV lithography

Microlithography: Science and Technology, Second Edition

Volumn , Issue , 2007, Pages 383-464

  Wurm, Stefan ^b   Gwyn, Charles ^a  

^a International Sematech ^*

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 69949125532     PISSN: None     EISSN: None     Source Type: Book    
DOI: None     Document Type: Chapter

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241. S. Bajt et al. 2004. Screening of Oxidation Resistant Capping Layers for EUV Multilayers, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
242. S. Hill et al. 2004. EUV and E-Beam Exposures of Ruthenium-Capped Multilayer Mirrors, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
243. T.E. Madey et al. 2004. Surface Phenomena Related to Degradation of EUV Mirrors, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
244. J. Pankert et al. 2004. Update on Philips’ EUV Light Source, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
245. U. Stamm et al. 2004. EUV Source Development Status at Xtreme Technologies-an Update, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
246. J. Ringling et al. 2004. Development Status of High Power Tin Gas Discharge Plasma Sources for Next Generation EUV Lithography, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
247. I.V. Fomenkov et al. 2004. Progress in Development of a High Power Source for EUV Lithography Based on DPF and LPP, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
248. M. Richardson et al. 2004. The Tin Doped Laser-Plasma EUV Source, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
249. C.S. Koay et al. 2004. Precision 13 nm Metrology of the Microscopic Tin Doped Laser-Plasma Source, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
250. G. O’Sullivan et al. 2004. Recent Results on EUV Emission from Laser Produced Plasmas with Slab Targets Containing Tin, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
251. S. Grantham et al. 2004. Characterization of EUV Detectors and Tools at NIST, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
252. R.J. Anderson et al. 2004. The Erosion of Materials Exposed to a Laser-Produced Plasma Extreme Ultraviolet Illumination Source, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
253. M.A. Jaworski et al. 2004. Gaseous Tin EUV Light Source Debris Mitigation and Characterization, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
254. E.L. Antonsen et al. 2004. Debris Characterization from a Z-pinch Extreme Ultra-Violet Light Source, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
255. M.A. Jaworski et al. 2004. Secondary RF Plasma System for Mitigation of EUV Source Debris and Advanced Fuels, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
256. D.N. Ruzic et al. 2004. Time Exposure and Surface Analysis of EUV Light and Debris Exposed Condenser Optics, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
257. H. Furukawa et al. 2004. Estimations on Generation of High Energy Particles from EUV LPP Light Sources, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
258. I. Nishiyama et al. 2004. Modeling for Charge Transfer of Highly Ionized Xe Ions Produced by Laser Produced Plasma, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
259. H. Komori et al. 2004. Magnetic Field Ion Mitigation for Collector Mirrors, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
260. J. Rocca et al. 2004. New NSF Center for EUV Science and Technology, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
261. P. Seidel. 2004. Commercial EUV Mask Blank Readiness for 45 nm Half-Pitch (hp) 2009 Manufacturing, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
262. P. Kearney et al. 2004. Defect Inspection on Extreme Ultraviolet Lithography Mask Blanks at the Mask Blank Development Center, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
263. R. Randive et al. 2004. Investigating the Composition and Potential Sources of Particles in a Low-Defect Mo/Si Deposition Process for Mask Blanks at ISMT-N, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
264. N. Harned et al. 2004. Progress on ASML’s Alpha Demo Tool, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
265. K. Orevk et al. 2004. An Integrated Demonstration of EUVL Reticle Particle Defect Control, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
266. T. Terasawa et al. 2004. Actinic EUV Mask Blank Inspection with Dark-Field Imaging Using LPP EUV Source and Two-Dimensional CCD Camera, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
267. A. Barty et al. 2004. EUV Mask Inspection and at-wavelength Imaging Using 13.5 nm Light, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
268. A.R. Stivers et al. 2004. EUV Mask Pilot Line at Intel Corporation, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
269. C. Holfeld et al. 2004. Challenges for the Integrated Manufacturing of EUV Masks, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
270. E.M. Gullikson, E. Tejnil, and A.R. Stivers. 2004. Modeling of Defect Inspection Sensitivity of a Confocal Microscope, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
271. E.Y. Shu. 2004. Applying Advanced Surface Analysis Techniques to Small Defect Characterization on EUV ML Blanks, 24th Annual BACUS Symposium, 5567-169, Monterey, California, September 13-17, 2004.
272. A.R. Stivers et al. 2004. EUV Mask Pilot Line at Intel, 24th Annual BACUS Symposium, 5567-03, Monterey, California, September 13-17, 2004.
273. T. Liang et al. 2004. E-Beam Mask Repair, 24th Annual BACUS Symposium, 5567-49, Monterey, California, September 13-17, 2004.
274. A. Tchikoulaeva, C. Holfeld, and J.H. Peters. 2004. Repair of EUV Masks Using a Nanomachining Tool, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
275. P. Yan et al. 2004. EUVL Mask Patterning with Blanks from Commercial Supplier, 24th Annual BACUS Symposium, 5567-83, Monterey, California, September 13-17, 2004.
276. R. Gronheid et al. 2004. Resist Evaluation Using EUV Interference Lithography, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
277. R.L. Brainard et al. 2004. Performance of EUV Photoresists on the ALS Micro Exposure Tool, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
278. P.P. Naulleau et al. 2004. High Resolution EUV Microexposures at the ALS, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
279. D. Yang et al. 2004. Molecular Glass Photoresists for EUV Lithography, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
280. A.C. Rudack et al. 2004. Facility Considerations for International SEMATECH’s EUV Resist Test Center, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
281. H. Oizumi et al. 2004. Lithographic Performance of High-Numerical Aperture (NA=0.3) Small-Field Exposure Tool (HINA) for EUV Lithography, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
282. W. Yueh et al. 2004. EUV Resist Patterning Performance from the Intel Microexpsure Tool (MET), 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
283. T. Asami. 2004. EUV Exposure System Development Plan in Nikon, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
284. Y. Gomei. 2004. EUVL Development Activity at Cannon, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
285. P. Kuerz et al. 2004. The EUVAlpha Demo Tool Program at Carl Zeiss SMT AG, 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.
286. P. Seidel. 2004. Initial Cost of Ownership Analysis for the 45 nm Half-Pitch (hp)/2009 Applications (EUV and 193i for 2009, 2010, 2011 Manufacturing), 3rd International Extreme Ultra-Violet Lithography (EUVL) Symposium, Miyazaki, Japan, November 2-4, 2004.