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Volumn 4688, Issue 1, 2002, Pages 173-181

Advances in low-defect multilayers for EUVL mask blanks

Author keywords

Defect; Defect detection; Defect mitigation; EUVL; Extreme Ultraviolet Lithography; Mask; Multilayer; Next Generation Lithography; NGL

Indexed keywords

COATING TECHNIQUES; ETCHING; ION BEAMS; MASKS; MULTILAYERS; PHOTOLITHOGRAPHY; POLYSTYRENES; SILICON WAFERS; THERMAL EXPANSION;

EID: 0036380184     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.472287     Document Type: Conference Paper
Times cited : (21)

References (16)
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    • S. P. Vernon, P. A. Kearney, W. M. Tong et al., "Masks for extreme ultraviolet lithography," presented at the 18th Annual BACUS Symposium on Photomask Technology and Management, Redwood City, CA, USA, 1998 B. J. Grenon, F. E. Abboud, editors, Proceedings of the SPIE Vol. 3546, pp. 184-93 (1998).
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  • 10
    • 0032593592 scopus 로고    scopus 로고
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    • M. Bujak, S. Burkhart, C. Cerjan et al., "Mask technology for EUV lithography," presented at the 15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98, Munich, Germany, 1998, U. Beringer, editor, Proceedings of SPIE Vol. 3665, pp. 30-39 (1998)
    • (1998) Proceedings of SPIE , vol.3665 , pp. 30-39
    • Bujak, M.1    Burkhart, S.2    Cerjan, C.3
  • 11
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    • An ion-assisted Mo-Si deposition process for planarizing reticle substrates for extreme ultraviolet lithography
    • P.B. Mirkarimi, E.A. Spiller, D.G. Steams, V. Sperry, and S.L. Baker, "An ion-assisted Mo-Si deposition process for planarizing reticle substrates for extreme ultraviolet lithography", IEEE J. Quant. Elec. 37, 1514-1516 (2001)
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  • 12
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    • Mirkarimi, P.B.1    Steams, D.G.2
  • 13
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.