High conversion efficiency tin material laser plasma source for EUVL

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5037 II, Issue , 2003, Pages 801-806

  Koay, C S ^a   Keyser, C ^a   Takenoshita, K ^a   Fujiwara, E ^a   Al Rabban, M ^a   Richardson, M C ^a   Turcu, I C E ^b   Rieger, H ^b   Stone, A ^b   Morris, J H ^b  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b JMAR Technologies Inc   (United States)

Author keywords

EUV lithography; EUV source; Laser plasma; Mass limited source

Indexed keywords

CALCULATIONS; LASER APPLICATIONS; LIGHT EMISSION; OPTICAL FREQUENCY CONVERSION; PLASMA SOURCES; TARGETS; TIN; ULTRAVIOLET RADIATION;

EXTREME ULTRAVIOLET LITHOGRAPHY; LASER PLASMA SOURCES; MASS-LIMITED LASER TARGET;

PHOTOLITHOGRAPHY;

EID: 0141724659     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.504572     Document Type: Conference Paper

References (18)

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3. D. Moyer, presented at Sematech Workshop on EUVL Source Development, San Jose, March 2, 2001 (unpublished)
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10. This source was developed in Spring 2000, and first mentioned in the JMAR presentation to the Sematech EUVL Source Workshop, March 2, 2001 (Santa Clara, CA)
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