Practical approach for modeling extreme ultraviolet lithography mask defects

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 1, 2002, Pages 81-86

  Gullikson, E M ^a   Cerjan, C ^b   Stearns, D G ^c   Mirkarimi, P B ^b   Sweeney, D W ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^c OS Associates   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ASPECT RATIO; COMPUTER SIMULATION; FINITE DIFFERENCE METHOD; LIGHT SCATTERING; MASKS; MULTILAYERS; NUCLEATION; POINT DEFECTS; SUBSTRATES; SURFACE PHENOMENA; TIME DOMAIN ANALYSIS;

SINGLE SURFACE APPROXIMATION (SSA);

PHOTOLITHOGRAPHY;

EID: 0036118745     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1428269     Document Type: Conference Paper

References (6)