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Volumn 5037 II, Issue , 2003, Pages 767-775

Development of Xe-filled capillary discharge extreme ultraviolet radiation source for semiconductor lithography

Author keywords

Capillary; Discharge; EUV; Lithography; Plasma; Pulse; Z pinch

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; OPTICS; PLASMA SOURCES; SEMICONDUCTOR DEVICE MANUFACTURE; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS; ULTRAVIOLET RADIATION; XENON;

EID: 0141501241     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.483704     Document Type: Conference Paper
Times cited : (6)

References (10)
  • 2
    • 0032653189 scopus 로고    scopus 로고
    • Intense EUV incoherent plasma sources for EUV lithography and other applications
    • May
    • W. T. Silfvast, "Intense EUV Incoherent Plasma Sources for EUV Lithography and Other Applications," IEEE Journal of Quantum Electronics, Vol. 35, No. 5, pp. 700-708, May 1999
    • (1999) IEEE Journal of Quantum Electronics , vol.35 , Issue.5 , pp. 700-708
    • Silfvast, W.T.1
  • 4
    • 85010119652 scopus 로고    scopus 로고
    • Radio-frequency-preionized xenon Z-pinch source for extreme ultraviolet lithography
    • March
    • M. McGeoch, "Radio-Frequency-Preionized Xenon Z-Pinch Source for Extreme Ultraviolet Lithography," Applied Optics, Vol. 37, No. 9, pp. 1651-1658, March 1998
    • (1998) Applied Optics , vol.37 , Issue.9 , pp. 1651-1658
    • McGeoch, M.1
  • 5
    • 3743122911 scopus 로고    scopus 로고
    • Intense xenon capillary discharge extreme-ultraviolet source in the 10-16-nm-wavelength region
    • October
    • M. A. Klosner, W. T. Silfvast, "Intense Xenon Capillary Discharge Extreme-Ultraviolet Source in the 10-16-nm-wavelength region," Optics Letters, Vol. 23, No. 20, pp. 1609-1611, October 1998
    • (1998) Optics Letters , vol.23 , Issue.20 , pp. 1609-1611
    • Klosner, M.A.1    Silfvast, W.T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.