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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4343, Issue 1, 2001, Pages 215-225

Comparison of different source concepts for EUVL

(5) Lebert, R a,b Bergmann, K a,b Juschkin, L a Rosier, O b Neff, W b

a AIXUV GmbH (Germany)

b FRAUNHOFER INSTITUTE FOR LASER TECHNOLOGY (Germany)

Author keywords

Discharge plasma; EUV sources; EUV lithography; Laser produced plasma; Pinch plasma

Indexed keywords

GROUND STATE; LASER PRODUCED PLASMAS; PHOTOEMISSION; PLASMA DENSITY; QUANTUM EFFICIENCY; ULTRAVIOLET RADIATION;

EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY; PINCH PLASMAS;

LITHOGRAPHY;

EID: 0034755489 PISSN: 0277786X EISSN: None Source Type: Journal
DOI: 10.1117/12.436650 Document Type: Article

Times cited : (26)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.