-
1
-
-
0036883194
-
Photospeed considerations for extreme ultraviolet lithography resists
-
P. M. Dentinger et al., "Photospeed considerations for extreme ultraviolet lithography resists," J. Vac. Sci. Tech. B 20, pp. 2962-2967, 2002.
-
(2002)
J. Vac. Sci. Tech. B
, vol.20
, pp. 2962-2967
-
-
Dentinger, P.M.1
-
2
-
-
0035758337
-
Exposure latitude requirements for high yield with photon flux-limited laser sources
-
in Optical Microlithography XIC, C. J. Progler, ed.
-
S. C. OBrien and M. E. Mason, "Exposure latitude requirements for high yield with photon flux-limited laser sources," in Optical Microlithography XIC, C. J. Progler, ed., Proc. SPIE 4346, pp. 534-543, 2001.
-
(2001)
Proc. SPIE
, vol.4346
, pp. 534-543
-
-
OBrien, S.C.1
Mason, M.E.2
-
4
-
-
0034846183
-
Continuum model of shot noise and line edge roughness
-
in Lithography for Semiconductor Manufacturing II, C. A. Mack and T. Stevenson, eds.
-
G. M. Gallatin, "Continuum model of shot noise and line edge roughness," in Lithography for Semiconductor Manufacturing II, C. A. Mack and T. Stevenson, eds., Proc. SPIE 4404, pp. 123-132, 2001.
-
(2001)
Proc. SPIE
, vol.4404
, pp. 123-132
-
-
Gallatin, G.M.1
-
5
-
-
0035998542
-
The influence of resist components on image blur in a patterned positive-tone chemically amplified photoresist
-
F. A. Houle, W. D. Hinsberg, M. I. Sanchez, and J. A. Hoffnagle, "The influence of resist components on image blur in a patterned positive-tone chemically amplified photoresist," J. Vac. Sci. Tech. B 20, p. 924, 2002.
-
(2002)
J. Vac. Sci. Tech. B
, vol.20
, pp. 924
-
-
Houle, F.A.1
Hinsberg, W.D.2
Sanchez, M.I.3
Hoffnagle, J.A.4
-
6
-
-
23044522106
-
Determination of coupled acid catalysis-diffusion processes in a positive tone chemically amplified photoresist
-
F. A. Houle et al., "Determination of coupled acid catalysis-diffusion processes in a positive tone chemically amplified photoresist," J. Vac. Sci. Tech. B 18, pp. 1874-1885, 2000.
-
(2000)
J. Vac. Sci. Tech. B
, vol.18
, pp. 1874-1885
-
-
Houle, F.A.1
-
7
-
-
0036028781
-
High numerical aperture: Imaging implications for chemically amplified photoresists
-
in Advances in Resist Technology and Processing XIX, T. H. Fedynyshyn, ed.
-
M. I. Sanchez et al., "High numerical aperture: imaging implications for chemically amplified photoresists," in Advances in Resist Technology and Processing XIX, T. H. Fedynyshyn, ed., Proc. SPIE 4690, pp. 351-356, 2002.
-
(2002)
Proc. SPIE
, vol.4690
, pp. 351-356
-
-
Sanchez, M.I.1
-
8
-
-
0141793660
-
Kinetic model of resist dissolution and roughening
-
F. A. Houle, W. D. Hinsberg, and M. I. Sanchez, "Kinetic model of resist dissolution and roughening," Macromolecules 35, p. 3591, 2002.
-
(2002)
Macromolecules
, vol.35
, pp. 3591
-
-
Houle, F.A.1
Hinsberg, W.D.2
Sanchez, M.I.3
-
10
-
-
0037109342
-
Method of measuring the spatial resolution of a photoresist
-
J. A. Hoffnagle, W. D. Hinsberg, M. I. Sanchez, and F. A. Houle, "Method of measuring the spatial resolution of a photoresist," Optics Letters 27, pp. 1776-1778, 2002.
-
(2002)
Optics Letters
, vol.27
, pp. 1776-1778
-
-
Hoffnagle, J.A.1
Hinsberg, W.D.2
Sanchez, M.I.3
Houle, F.A.4
-
12
-
-
0141570461
-
EUV photoresist results from the VNL and the EUV LLC
-
in Emerging Lithographic Technologies VI, R. L. Engelstadt, ed.
-
J. L. Cobb et al., "EUV photoresist results from the VNL and the EUV LLC," in Emerging Lithographic Technologies VI, R. L. Engelstadt, ed., Proc. SPIE 4688, pp. 412-420, 2002.
-
(2002)
Proc. SPIE
, vol.4688
, pp. 412-420
-
-
Cobb, J.L.1
-
13
-
-
0343007082
-
Deep ultraviolet interferometric lithography as a tool for assessment of chemically amplified photoresist performance
-
W. D. Hinsberg et al., "Deep ultraviolet interferometric lithography as a tool for assessment of chemically amplified photoresist performance," J. Vac. Sci. Tech. B 16, pp. 3689-3694, 1998.
-
(1998)
J. Vac. Sci. Tech. B
, vol.16
, pp. 3689-3694
-
-
Hinsberg, W.D.1
-
14
-
-
0032625410
-
Aerial image contrast using interferometric lithography: Effect on line-edge roughness
-
in Advances in Resist Technology and Processing XVI, W. Conley, ed.
-
M. I. Sanchez et al., "Aerial image contrast using interferometric lithography: effect on line-edge roughness," in Advances in Resist Technology and Processing XVI, W. Conley, ed., Proc. SPIE 3678, pp. 160-171, 1999.
-
(1999)
Proc. SPIE
, vol.3678
, pp. 160-171
-
-
Sanchez, M.I.1
-
15
-
-
0035519476
-
Resist line edge roughness and aerial image contrast
-
J. Shin et al., "Resist line edge roughness and aerial image contrast," J. Vac. Sci. Tech. B 19, pp. 2890-2895, 2001.
-
(2001)
J. Vac. Sci. Tech. B
, vol.19
, pp. 2890-2895
-
-
Shin, J.1
|