EUV photoresist performance results from the VNL and the EUV LLC

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4688, Issue 1, 2002, Pages 412-420

  Cobb, Jonathan ^a   Dentinger, Paul ^b   Hunter, Luke ^b   O'Connell, Donna ^b   Gallatin, Gregg ^c   Hinsberg, Bill ^d   Houle, Frances ^d   Sanchez, Martha ^d   Domke, Wolf Dieter ^e   Wurm, Stefan ^f   Okoroyanwu, Uzodinma ^g   Lee, Sang Hun ^h  

^a MOTOROLA INC   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d IBM ALMADEN RESEARCH CENTER   (United States)

^e Infineon   (Germany)

^f INFINEON TECHNOLOGIES   (United States)

^g ADVANCED MICRO DEVICES   (United States)

^h INTEL CORPORATION   (United States)

Author keywords

EUVL; Extreme Ultraviolet Lithography; Line edge roughness; Photoresist; Photospeed; Resolution

Indexed keywords

LIGHTING; NATURAL FREQUENCIES; OPTICAL RESOLVING POWER; SPECTRUM ANALYSIS; SURFACE ROUGHNESS; ULTRAVIOLET RADIATION;

EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL);

PHOTORESISTS;

EID: 0141570461     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.472316     Document Type: Article

References (13)

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13. 2 exposed fields per wafer.