EUVL mask blank repair

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4688, Issue 1, 2002, Pages 385-394

  Barty, Anton ^a   Mirkarimi, Paul B ^a   Stearns, Daniel G ^a   Sweeney, Don ^a   Chapman, Henry N ^a   Clift, Miles ^b   Hector, Scott ^c   Yi, Moonsuk ^d  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c MOTOROLA INC   (United States)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Cost of ownership; Defect; Extreme ultraviolet lithography; Mask; Multilayer; Printability; Reticle

Indexed keywords

DEGRADATION; DEPOSITION; ELECTRON BEAMS; IMAGE PROCESSING; ION BEAMS; LIGHT REFLECTION; MASKS; MILLING (MACHINING); MOLYBDENUM; OPTICAL MULTILAYERS; PHASE SHIFT; SEMICONDUCTING SILICON; THIN FILMS; ULTRAVIOLET RADIATION;

EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL); ION BEAM MILLING;

PHOTOLITHOGRAPHY;

EID: 0036381282     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.472313     Document Type: Article

References (8)

1. T.Liang et.al. "Progress in EUV mask repair using a focussed ion beam" 18(6) J.Vac.Sci. Ttechnol.B. 3216, 2000.
2. E.M.Gullikson, C.Cerjan, D.G.Stearns, P.B.Mirkarimi and D.W.Sweeney; "Practical approach for modeling extreme ultraviolet lithography mask defects" (2002) 20 J.Vac.Sci.Technol.B. 81.
3. M.R.Teague "Image formation in terms of the transport equation" 11 J.Opt.Soc.Am.A. 2019 (1985).
4. The reflectometer on beamline 6.3.2 at the ALS has a typical spot size of 100×300μm whilst the BL11.3.2 reflectometer has a typical spot size of 3×3μm. E.M.Gullikson, S. Mrowka, and B.B. Kaufmann, "Recent Developments in EUV Reflectometry at the Advanced Light Source, " Emerging Lithographic Technologies V, SPIE vol. 4343, (2001).
5. P.Mirkarimi, D.Stearns, S.Baker, J.Elmer, D.Sweeney and E.Gullikson: "Method for repairing Mo/Si multilayer thin film phase defects in reticles for extreme ultraviolet lithography" (2002) 91(1) J.Appl.Phys. 81
6. Energy deposition profiles were obtained from Motorola [Scott Hector, Jonathan Cobb, Vladimir Ivin, Mikhail V. Silakov, and George A. Babushkin, "Bremsstrahlung Emission and Absorption in Electron Projection Lithography, " Emerging Lithographic Technologies V, SPIE Proceedings volume 4343, 95-106.] and Sergey Babin of Soft Services, and they were also calculated independently at LLNL for the purposes of comparison.
7. P.Mirkarimi, D.Stearns, S.Baker, J.Elmer, D.Sweeney and E.Gullikson: "Method for repairing Mo/Si multilayer thin film phase defects in reticles for extreme ultraviolet lithography" (2002) 91(1) J.Appl.Phys. 81
8. Scott D. Hector, "EUVL Masks: Requirements and Potential Solutions, " to be published in Emerging Lithographic Technologies VI, SPIE Proceedings volume 4688, 2002.